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NSPM6201MUTBG

Onsemi

NSPM6201MUTBG by Onsemi

NSPM6201MUTBG by Onsemi is a single bidirectional transient suppression device with 20-27V breakdown voltage. It operates b/w -65 to 150 °C and has a max clamping voltage of 39V. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 6,882 parts In-Stock

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Digiode

USA . 686 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.144

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$0.131

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$0.118

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Component Stockers USA

USA . 39,021 parts In-Stock

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$3.820

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AZTECH Wire

Italy . 82 parts In-Stock

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$14.350

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Kulean Microsystems

USA . 3,703 parts In-Stock

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Corphita

USA . 1,387 parts In-Stock

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Problanco Electronics

Mexico . 1,384 parts In-Stock

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SupplyDigital Components

Austria . 1,165 parts In-Stock

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UHIMA Technologies

Türkiye . 753 parts In-Stock

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Corohmni

South Africa . 430 parts In-Stock

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TANS Electronics

Latvia . 48 parts In-Stock

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Overview

Discover the NSPM6201MUTBG by Onsemi, a top-of-the-line transient suppression device that guarantees unparalleled quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed to provide optimal protection against voltage spikes and surges. Ideal for a wide range of applications, this diode offers peace of mind and assurance that your electronics are safeguarded. With its compact design and advanced technology, the NSPM6201MUTBG ensures maximum performance and efficiency. Upgrade to the best in transient suppression devices and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the device, ensuring a longer lifespan.

Config: SINGLE

Single configuration makes installation and integration simpler and more straightforward.

Maximum Reverse Current: 1 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: SQUARE

Square shape allows for easy mounting and fitting in various applications.

No. of Terminals: 3

Having three terminals provides flexibility in connecting the device to the circuit.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a variety of environments.

Minimum Operating Temperature: -65 °C

Wide temperature range ensures reliable performance even in extreme cold conditions.

Minimum Breakdown Voltage: 21 V

Higher minimum breakdown voltage offers better protection against surges and voltage spikes.

Maximum Breakdown Voltage: 27 V

Having a maximum breakdown voltage of 27V ensures reliable clamping of excessive voltages.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode is specifically designed to provide protection against transient voltage spikes.

Technology: AVALANCHE

Avalanche technology allows for fast response and high energy handling capacity.

Maximum Repetitive Peak Reverse Voltage: 20 V

This value determines the maximum voltage the device can handle in reversed polarity, ensuring protection for the circuit.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against voltage spikes in both directions.

Maximum Clamping Voltage: 39 V

High clamping voltage ensures the device can effectively suppress transient voltage spikes.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices NSPM6201MUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

27 V

Minimum Breakdown Voltage:

21 V

Maximum Clamping Voltage:

39 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PDSO-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

20 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

NSPM6201MUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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