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NSPM2052MUT5G

Onsemi

NSPM2052MUT5G by Onsemi

NSPM2052MUT5G by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 3 terminals. It has a reverse test voltage of 5V, max clamping voltage of 9V, and operates b/w -65 to 150 °C. Ideal for transient suppression in electronics per IEC-61000-4-2, 4-5 standards.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,554 parts In-Stock

1+ parts

$0.120

100+ parts

-

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6,554

$0.120

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Flip Electronics (Authorized)

USA . 775,932 parts In-Stock

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775,932

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Element14

Singapore . 13,009 parts In-Stock

1+ parts

-

100+ parts

$0.449

1k+ parts

$0.281

10k+ parts

$0.237

13,009

-

$0.449

$0.281

$0.237

Farnell

UK . 12,944 parts In-Stock

1+ parts

-

100+ parts

$0.234

1k+ parts

$0.146

10k+ parts

$0.130

12,944

-

$0.234

$0.146

$0.130

Mouser Electronics

USA . 9,842 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.163

9,842

-

-

-

$0.163

RS (Exports)

UK . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.208

1k+ parts

$0.170

10k+ parts

$0.162

8,000

-

$0.208

$0.170

$0.162

Chip1Stop

Japan . 7,082 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.138

10k+ parts

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7,082

-

$0.168

$0.138

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Verical

USA . 6,554 parts In-Stock

1+ parts

-

100+ parts

$0.120

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6,554

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$0.120

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DigiKey

USA . 676 parts In-Stock

1+ parts

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100+ parts

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$0.176

676

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$0.176

Distributors (In-Stock)

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Vyrian

USA . 470 parts In-Stock

1+ parts

$0.163

100+ parts

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470

$0.163

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Digiode

USA . 1,858 parts In-Stock

1+ parts

$0.191

100+ parts

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1,858

$0.191

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Flip Electronics

USA . 775,932 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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775,932

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Cyclops Electronics Ltd

UK . 126 parts In-Stock

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126

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Distributors (Availability)

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Corohmni

South Africa . 409 parts In-Stock

1+ parts

$0.163

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409

$0.163

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Corphita

USA . 1,898 parts In-Stock

1+ parts

$0.181

100+ parts

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1,898

$0.181

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Continental Prestige Electronics

USA . 14,879 parts In-Stock

1+ parts

$0.308

100+ parts

$0.209

1k+ parts

$0.130

10k+ parts

$0.106

14,879

$0.308

$0.209

$0.130

$0.106

Problanco Electronics

Mexico . 6,810 parts In-Stock

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6,810

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Kulean Microsystems

USA . 2,696 parts In-Stock

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2,696

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SupplyDigital Components

Austria . 1,670 parts In-Stock

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1,670

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TANS Electronics

Latvia . 1,548 parts In-Stock

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1,548

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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911

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Perfect Parts

USA . 34 parts In-Stock

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34

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Overview

Unleash the power of protection with the NSPM2052MUT5G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that ensure your electronics stay safe from voltage spikes and surges. Whether you're looking to safeguard sensitive equipment or prevent damage during power surges, this single-configured, surface-mount device is the perfect solution. With a wide operating temperature range and high breakdown voltages, this chip carrier style device offers unmatched reliability and performance. Trust Onsemi to provide the protection your electronics deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the device, making it suitable for a variety of applications.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the device, offering reliable transient suppression.

Minimum Breakdown Voltage: 5.1 V

The minimum breakdown voltage of 5.1 V provides reliable overvoltage protection, safeguarding connected circuits from potential damage.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with IEC standards ensures the reliability and quality of the product, meeting industry requirements for transient suppression devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures effective suppression of voltage transients, protecting connected devices from voltage spikes.

Technical Specifications

Transient Suppression Devices NSPM2052MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7 V

Minimum Breakdown Voltage:

5.1 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSPM2052MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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