Loading...

NSPM8151MUTBG

Onsemi

NSPM8151MUTBG by Onsemi

NSPM8151MUTBG by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 17.5V breakdown voltage, 1uA reverse current, and 27V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes, meeting IEC-61000-4-2 and IEC-61000-4-5 standards.

Median Price

$0.830

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.830

100+ parts

$0.330

1k+ parts

$0.227

10k+ parts

-

3,000

$0.830

$0.330

$0.227

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,252 parts In-Stock

1+ parts

$0.466

100+ parts

-

1k+ parts

-

10k+ parts

-

2,252

$0.466

-

-

-

Vyrian

USA . 1,103 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

10k+ parts

-

1,103

$0.490

-

-

-

NAC Semi

USA . 186,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.306

186,000

-

-

-

$0.306

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,000

-

-

-

-

Flip Electronics

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,549 parts In-Stock

1+ parts

$0.441

100+ parts

-

1k+ parts

-

10k+ parts

-

1,549

$0.441

-

-

-

Corohmni

South Africa . 155 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

10k+ parts

-

155

$0.490

-

-

-

Kulean Microsystems

USA . 7,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,081

-

-

-

-

Problanco Electronics

Mexico . 6,741 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,741

-

-

-

-

TANS Electronics

Latvia . 2,739 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,739

-

-

-

-

SupplyDigital Components

Austria . 1,795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,795

-

-

-

-

UHIMA Technologies

Türkiye . 718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

718

-

-

-

-

Overview

Protect your electronics with the NSPM8151MUTBG by Onsemi, a top-of-the-line Transient Suppression Device that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this product is designed to safeguard your equipment from voltage spikes and surges, ensuring seamless operation and longevity. Ideal for a wide range of applications, this device provides peace of mind and protection for your valuable electronics. Invest in the NSPM8151MUTBG today and experience the unbeatable value and benefits it brings to your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the component, making it durable and reliable for long-term use.

Nominal Breakdown Voltage: 17.5 V

The nominal breakdown voltage of 17.5 V ensures effective suppression of transient voltages within the specified range, offering protection to connected devices.

Maximum Reverse Current: 1 uA

With a low maximum reverse current of 1 uA, this transient suppression device helps prevent damage to sensitive electronics by diverting excess current away from them.

Maximum Clamping Voltage: 27 V

The maximum clamping voltage of 27 V indicates the level at which the device will limit transient voltage spikes, ensuring that connected equipment is not subjected to harmful voltage levels.

Reference Standard: IEC-61000-4-2; IEC-61000-4-5

Compliance with international standards such as IEC-61000-4-2 and IEC-61000-4-5 ensures that the transient suppression device meets quality and performance requirements for reliable operation.

Technical Specifications

Transient Suppression Devices NSPM8151MUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16 V

Nominal Breakdown Voltage:

17.5 V

Maximum Clamping Voltage:

27 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM8151MUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 15