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NSPM3031MXT5G

Onsemi

NSPM3031MXT5G by Onsemi

NSPM3031MXT5G by Onsemi is a single transient suppression device with 4.6V breakdown voltage, 0.1uA reverse current, and 7.6V clamping voltage. It is used for surge protection in applications requiring bidirectional polarity and operates b/w -65 to 150 °C temperature range.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 18 parts In-Stock

1+ parts

$0.315

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-

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18

$0.315

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Farnell

UK . 2,930,071 parts In-Stock

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$0.057

2,930,071

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$0.057

Rochester

USA . 1,787,671 parts In-Stock

1+ parts

-

100+ parts

$0.055

1k+ parts

$0.045

10k+ parts

$0.041

1,787,671

-

$0.055

$0.045

$0.041

Verical

USA . 1,787,671 parts In-Stock

1+ parts

-

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$0.051

1,787,671

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$0.051

Flip Electronics (Authorized)

USA . 72,000 parts In-Stock

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72,000

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DigiKey

USA . 2,250 parts In-Stock

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2,250

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Chip1Stop

Japan . 119 parts In-Stock

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100+ parts

$0.098

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119

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$0.098

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 822 parts In-Stock

1+ parts

$0.045

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822

$0.045

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Vyrian

USA . 108 parts In-Stock

1+ parts

$0.047

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108

$0.047

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Flip Electronics

USA . 72,000 parts In-Stock

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72,000

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,270,563 parts In-Stock

1+ parts

$0.040

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1,270,563

$0.040

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Corphita

USA . 1,545 parts In-Stock

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$0.042

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1,545

$0.042

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Corohmni

South Africa . 209 parts In-Stock

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$0.047

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209

$0.047

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Continental Prestige Electronics

USA . 2,957,225 parts In-Stock

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$0.045

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2,957,225

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$0.045

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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TANS Electronics

Latvia . 6,749 parts In-Stock

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6,749

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Kulean Microsystems

USA . 4,591 parts In-Stock

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4,591

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Problanco Electronics

Mexico . 2,476 parts In-Stock

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2,476

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SupplyDigital Components

Austria . 1,004 parts In-Stock

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1,004

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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685

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Overview

Enhance the durability and reliability of your electronic devices with the NSPM3031MXT5G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality Transient Suppression Devices that provide superior protection against voltage spikes and surges. Perfect for a wide range of applications, this product ensures optimal performance and longevity for your electronics. Trust Onsemi to deliver innovative solutions that bring value and peace of mind to customers looking for high-quality components. Choose the NSPM3031MXT5G and experience the benefits of cutting-edge technology in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various environmental conditions.

Nominal Breakdown Voltage: 4.6 V

Ensures reliable protection against voltage spikes and surges up to 4.6 volts.

Maximum Reverse Current: 0.1 uA

Low reverse current minimizes power loss and improves efficiency of the device.

Minimum Operating Temperature: -65 °C

Can operate in extreme low temperature environments, providing consistent performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression, ensuring effective protection for connected electronics.

Technical Specifications

Transient Suppression Devices NSPM3031MXT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

5.5 V

Minimum Breakdown Voltage:

4 V

Nominal Breakdown Voltage:

4.6 V

Maximum Clamping Voltage:

7.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM3031MXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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