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NSPM0051MUT5G

Onsemi

NSPM0051MUT5G by Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.223

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 840,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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840,000

-

-

-

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DigiKey

USA . 760,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.130

760,000

-

-

-

$0.130

Verical

USA . 7,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.223

7,995

-

-

-

$0.223

Rochester

USA . 7,995 parts In-Stock

1+ parts

-

100+ parts

$0.241

1k+ parts

$0.200

10k+ parts

$0.178

7,995

-

$0.241

$0.200

$0.178

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,456 parts In-Stock

1+ parts

$0.190

100+ parts

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2,456

$0.190

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Flip Electronics

USA . 760,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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760,000

-

-

-

-

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

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24,000

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Digiode

USA . 2,240 parts In-Stock

1+ parts

-

100+ parts

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2,240

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,982 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

3,982

$0.090

-

$0.061

$0.061

Corohmni

South Africa . 450 parts In-Stock

1+ parts

$0.190

100+ parts

-

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450

$0.190

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Perfect Parts

USA . 24,154 parts In-Stock

1+ parts

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24,154

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TANS Electronics

Latvia . 5,958 parts In-Stock

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5,958

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-

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Problanco Electronics

Mexico . 2,835 parts In-Stock

1+ parts

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2,835

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SupplyDigital Components

Austria . 2,318 parts In-Stock

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2,318

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Corphita

USA . 985 parts In-Stock

1+ parts

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985

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UHIMA Technologies

Türkiye . 632 parts In-Stock

1+ parts

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632

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Kulean Microsystems

USA . 342 parts In-Stock

1+ parts

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100+ parts

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342

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-

Technical Specifications

Transient Suppression Devices NSPM0051MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM0051MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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