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NSPM0101MUT5G

Onsemi

NSPM0101MUT5G by Onsemi

NSPM0101MUT5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 10V reverse voltage, 0.5uA max reverse current, and 20V clamping voltage. Ideal for transient suppression in electronics due to its avalanche technology and IEC-61000-4-2, 4-5 standards compliance.

Median Price

$0.329

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 252 parts In-Stock

1+ parts

$0.257

100+ parts

$0.241

1k+ parts

$0.237

10k+ parts

-

252

$0.257

$0.241

$0.237

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Farnell

UK . 2,336,480 parts In-Stock

1+ parts

-

100+ parts

$0.439

1k+ parts

$0.283

10k+ parts

$0.280

2,336,480

-

$0.439

$0.283

$0.280

Rochester

USA . 2,239,880 parts In-Stock

1+ parts

-

100+ parts

$0.329

1k+ parts

$0.273

10k+ parts

$0.244

2,239,880

-

$0.329

$0.273

$0.244

Verical

USA . 2,239,880 parts In-Stock

1+ parts

-

100+ parts

-

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$0.304

2,239,880

-

-

-

$0.304

Flip Electronics (Authorized)

USA . 37,081 parts In-Stock

1+ parts

-

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37,081

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Chip1Stop

Japan . 567 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.350

10k+ parts

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567

-

$0.357

$0.350

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,526 parts In-Stock

1+ parts

$0.190

100+ parts

-

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1,526

$0.190

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-

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Digiode

USA . 1,105 parts In-Stock

1+ parts

$0.269

100+ parts

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1,105

$0.269

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-

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Flip Electronics

USA . 37,081 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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37,081

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Netsource Technology, Inc.

USA . 7,013 parts In-Stock

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7,013

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,011,002 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

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10k+ parts

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1,011,002

$0.162

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Corohmni

South Africa . 141 parts In-Stock

1+ parts

$0.190

100+ parts

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141

$0.190

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Corphita

USA . 456 parts In-Stock

1+ parts

$0.255

100+ parts

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456

$0.255

-

-

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Continental Prestige Electronics

USA . 2,340,564 parts In-Stock

1+ parts

$0.472

100+ parts

$0.347

1k+ parts

$0.221

10k+ parts

$0.217

2,340,564

$0.472

$0.347

$0.221

$0.217

Perfect Parts

USA . 52,541 parts In-Stock

1+ parts

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52,541

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Kulean Microsystems

USA . 6,197 parts In-Stock

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6,197

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Problanco Electronics

Mexico . 4,110 parts In-Stock

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4,110

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SupplyDigital Components

Austria . 1,530 parts In-Stock

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1,530

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UHIMA Technologies

Türkiye . 754 parts In-Stock

1+ parts

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754

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TANS Electronics

Latvia . 737 parts In-Stock

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737

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Overview

Unleash the power of protection with the NSPM0101MUT5G by Onsemi - a top-tier manufacturer in the realm of Transient Suppression Devices. This compact yet mighty device, designed with a robust plastic/epoxy package body material, offers unparalleled peace of mind against voltage spikes and surges. Ideal for a wide range of applications, this single-configured, surface-mount device boasts a maximum clamping voltage of 20V, safeguarding your electronics with precision and efficiency. Trust in the reliability and quality of Onsemi, and elevate your projects to new heights with the NSPM0101MUT5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the device, making it suitable for various environmental conditions.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 0.5 uA

The low maximum reverse current ensures minimal power loss and improves overall efficiency of the device.

Maximum Clamping Voltage: 20 V

With a maximum clamping voltage of 20V, this device can effectively protect sensitive electronic components from voltage spikes or surges.

Technology: AVALANCHE

The use of avalanche technology allows for rapid response to transient events, offering reliable protection for connected equipment.

Technical Specifications

Transient Suppression Devices NSPM0101MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

12 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

10 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM0101MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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