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NSPM1042MUTBG

Onsemi

NSPM1042MUTBG by Onsemi

NSPM1042MUTBG by Onsemi is a single bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 4.7V breakdown voltage, 0.1uA reverse current, and 9.5V clamping voltage. It is used for transient suppression in electronics, meeting IEC-61000-4-2, 4-5 standards at -65 to 150 °C operating temp range.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 837 parts In-Stock

1+ parts

$0.162

100+ parts

$0.153

1k+ parts

$0.138

10k+ parts

-

837

$0.162

$0.153

$0.138

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Future Electronics

Canada . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.160

10k+ parts

$0.150

6,000

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-

$0.160

$0.150

Mouser Electronics

USA . 5,509 parts In-Stock

1+ parts

-

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$0.153

5,509

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$0.153

Arrow

USA . 3,000 parts In-Stock

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$0.138

3,000

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$0.138

Verical

USA . 3,000 parts In-Stock

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$0.138

3,000

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$0.138

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.146

3,000

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$0.146

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,738 parts In-Stock

1+ parts

$0.138

100+ parts

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1,738

$0.138

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Digiode

USA . 1,101 parts In-Stock

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$0.154

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$0.154

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Chip Stock

USA . 41,000 parts In-Stock

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41,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,181 parts In-Stock

1+ parts

$0.117

100+ parts

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$0.117

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Corohmni

South Africa . 248 parts In-Stock

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$0.138

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248

$0.138

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Corphita

USA . 889 parts In-Stock

1+ parts

$0.146

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889

$0.146

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Infinite Electronics LLP (Excess)

. 12,008 parts In-Stock

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12,008

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 4,917 parts In-Stock

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TANS Electronics

Latvia . 4,760 parts In-Stock

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4,760

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Problanco Electronics

Mexico . 3,983 parts In-Stock

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Kulean Microsystems

USA . 1,251 parts In-Stock

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UHIMA Technologies

Türkiye . 326 parts In-Stock

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326

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Overview

Enhance your electronic devices with the NSPM1042MUTBG by Onsemi, a top-tier manufacturer known for quality and reliability. As a Transient Suppression Device, this product offers superior protection against voltage spikes, ensuring smooth operation and longevity for your equipment. Perfect for a variety of applications, this chip carrier-style diode boasts a bidirectional polarity and maximum clamping voltage of 9.5V, meeting industry standards like IEC-61000-4-2 and 4-5. Trust in Onsemi to deliver cutting-edge technology that safeguards your investments and keeps your devices running at their best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the device, making it suitable for various applications in different environments.

Nominal Breakdown Voltage: 4.7 V

The nominal breakdown voltage of 4.7 V ensures that the device can effectively suppress transient voltage spikes and protect connected components within its operating range.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1 uA indicates minimal leakage current, which is crucial for maintaining the integrity of the circuit and preventing damage to sensitive components.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the device to withstand elevated temperatures during operation, ensuring reliable performance in demanding conditions.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with IEC standards 61000-4-2 and 61000-4-5 ensures that the device has been tested and certified for reliable performance and effectiveness in protecting against electrostatic discharge and surge events.

Technical Specifications

Transient Suppression Devices NSPM1042MUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.5 V

Minimum Breakdown Voltage:

4.5 V

Nominal Breakdown Voltage:

4.7 V

Maximum Clamping Voltage:

9.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

4.8 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

4.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSPM1042MUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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