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NSPM1041BMUTBG

Onsemi

NSPM1041BMUTBG by Onsemi

NSPM1041BMUTBG by Onsemi is a single bidirectional avalanche diode with 5.25V breakdown voltage and 1uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes, meeting IEC-61000-4-2, 4-5 standards.

Median Price

$0.199

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 212 parts In-Stock

1+ parts

$0.137

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212

$0.137

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Mouser Electronics

USA . 773 parts In-Stock

1+ parts

$0.470

100+ parts

$0.287

1k+ parts

$0.200

10k+ parts

$0.153

773

$0.470

$0.287

$0.200

$0.153

DigiKey

USA . 185 parts In-Stock

1+ parts

$0.860

100+ parts

$0.345

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-

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185

$0.860

$0.345

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Rochester

USA . 11,403,518 parts In-Stock

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-

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$0.199

1k+ parts

$0.165

10k+ parts

$0.147

11,403,518

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$0.199

$0.165

$0.147

Verical

USA . 10,893,200 parts In-Stock

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$0.184

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$0.184

Flip Electronics (Authorized)

USA . 12,078 parts In-Stock

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Chip1Stop

Japan . 213 parts In-Stock

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Digiode

USA . 2,331 parts In-Stock

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$0.136

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$0.136

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Vyrian

USA . 2,336 parts In-Stock

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$0.143

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2,336

$0.143

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Chip Stock

USA . 26,000 parts In-Stock

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Flip Electronics

USA . 13,274 parts In-Stock

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Netsource Technology, Inc.

USA . 6,815 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,094 parts In-Stock

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$0.129

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$0.129

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Corohmni

South Africa . 209 parts In-Stock

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$0.143

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209

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RC Electronics

USA . 79,899 parts In-Stock

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Kepictronics

USA . 73,500 parts In-Stock

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Perfect Parts

USA . 22,849 parts In-Stock

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ChipstoGo Electronic ltd

UK . 10,399 parts In-Stock

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Problanco Electronics

Mexico . 7,372 parts In-Stock

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SupplyDigital Components

Austria . 6,876 parts In-Stock

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Kulean Microsystems

USA . 4,671 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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GreenTree Electronics

Israel . 1,085 parts In-Stock

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Authorized Procurement Solutions

USA . 985 parts In-Stock

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UHIMA Technologies

Türkiye . 626 parts In-Stock

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TANS Electronics

Latvia . 399 parts In-Stock

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Overview

Discover the NSPM1041BMUTBG by Onsemi, a top-tier Transient Suppression Device that guarantees superior quality and reliability. This single-config chip carrier is designed for a wide range of applications, providing exceptional protection against voltage spikes. With a nominal breakdown voltage of 5.25 V and maximum clamping voltage of 10.8 V, this product ensures optimal performance in challenging environments. Trust Onsemi's expertise in semiconductor manufacturing to deliver a durable and efficient solution that brings value and peace of mind to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the transient suppression device.

Nominal Breakdown Voltage: 5.25 V

The higher nominal breakdown voltage ensures that the device efficiently suppresses transient voltage spikes, providing reliable protection for electronic circuits.

Maximum Reverse Current: 1 uA

With a low maximum reverse current, the transient suppression device minimizes power consumption and ensures minimal impact on the overall circuit performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to withstand harsh environmental conditions, making it suitable for a wide range of applications.

Reference Standard: IEC-61000-4-2, 4-5

Being compliant with relevant industry standards ensures that the transient suppression device meets quality and performance requirements, making it a reliable choice for designing electronic systems.

Technical Specifications

Transient Suppression Devices NSPM1041BMUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

4.5 V

Nominal Breakdown Voltage:

5.25 V

Maximum Clamping Voltage:

10.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM1041BMUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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