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NSPM3042MXT5G

Onsemi

NSPM3042MXT5G by Onsemi

NSPM3042MXT5G by Onsemi is a single bidirectional avalanche diode with 5V breakdown voltage, 0.5uA reverse current, and 8V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes, meeting IEC-61000-4-2 and 4-5 standards.

Median Price

$0.067

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,865 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

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10k+ parts

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10,865

$0.048

-

-

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DigiKey

USA . 7,589 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

1k+ parts

$0.072

10k+ parts

$0.058

7,589

$0.290

$0.110

$0.072

$0.058

Rochester

USA . 13,499,000 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.053

13,499,000

-

$0.071

$0.059

$0.053

Verical

USA . 13,499,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.066

13,499,000

-

-

-

$0.066

Farnell

UK . 13,499,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.067

10k+ parts

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13,499,000

-

-

$0.067

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Flip Electronics (Authorized)

USA . 3,224,000 parts In-Stock

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3,224,000

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Mouser Electronics

USA . 37,907 parts In-Stock

1+ parts

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1k+ parts

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10k+ parts

$0.048

37,907

-

-

-

$0.048

Chip1Stop

Japan . 15,567 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.054

10k+ parts

$0.051

15,567

-

$0.090

$0.054

$0.051

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,794 parts In-Stock

1+ parts

$0.048

100+ parts

-

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1,794

$0.048

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Digiode

USA . 1,837 parts In-Stock

1+ parts

$0.055

100+ parts

-

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1,837

$0.055

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Flip Electronics

USA . 3,229,471 parts In-Stock

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3,229,471

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 157 parts In-Stock

1+ parts

$0.048

100+ parts

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157

$0.048

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Corphita

USA . 2,463 parts In-Stock

1+ parts

$0.052

100+ parts

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2,463

$0.052

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Continental Prestige Electronics

USA . 13,227,000 parts In-Stock

1+ parts

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$0.053

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13,227,000

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$0.053

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RC Electronics

USA . 90,000 parts In-Stock

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90,000

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Lixinc

USA . 15,183 parts In-Stock

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15,183

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A-Z Elektronik GmbH

Germany . 6,528 parts In-Stock

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6,528

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Kulean Microsystems

USA . 5,002 parts In-Stock

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5,002

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Problanco Electronics

Mexico . 3,444 parts In-Stock

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3,444

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TANS Electronics

Latvia . 3,039 parts In-Stock

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3,039

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SupplyDigital Components

Austria . 3,008 parts In-Stock

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3,008

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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263

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Overview

Transform your electronics with the NSPM3042MXT5G by Onsemi, a top-of-the-line transient suppression device that guarantees unparalleled quality and reliability. As a leader in the industry, Onsemi ensures cutting-edge technology and superior performance in every product. This versatile chip carrier is perfect for a wide range of applications, offering protection against sudden voltage spikes and ensuring smooth operation of your devices. Say goodbye to worries about electrical surges and enjoy peace of mind with the NSPM3042MXT5G, the ultimate solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transient suppression device, making it suitable for a variety of applications.

Nominal Breakdown Voltage: 5 V

The 5V breakdown voltage ensures effective suppression of transient voltage spikes, protecting sensitive electronic components from damage.

Maximum Reverse Current: 0.5 uA

The low maximum reverse current of 0.5uA indicates efficient performance of the transient suppression device in diverting excess current away from the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the device to function reliably in a wide range of environments, increasing its versatility.

Minimum Breakdown Voltage: 4.55 V

The minimum breakdown voltage of 4.55V ensures that the device activates effectively when transient voltage levels exceed this threshold, providing reliable protection.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish offers excellent conductivity and corrosion resistance, enhancing the overall performance and longevity of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The transil diode technology allows for rapid response to voltage surges, diverting excess energy away from sensitive components and safeguarding the circuit.

Technical Specifications

Transient Suppression Devices NSPM3042MXT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

4.55 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

4.8 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

4.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPM3042MXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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