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ESD7102BT1G

Onsemi

ESD7102BT1G by Onsemi

ESD7102BT1G by Onsemi is a Transient Suppression Device with 2 ELEMENTS, COMMON ANODE config, and 16V max repetitive peak reverse voltage. It operates b/w -55 to 150 °C and has a max clamping voltage of 55V. Ideal for protecting sensitive electronics from transient voltage spikes in various applications.

Median Price

$0.131

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

1+ parts

$0.640

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20

$0.640

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Rochester

USA . 341,920 parts In-Stock

1+ parts

-

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$0.131

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$0.109

10k+ parts

$0.097

341,920

-

$0.131

$0.109

$0.097

Verical

USA . 339,000 parts In-Stock

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$0.121

339,000

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$0.121

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Digiode

USA . 1,077 parts In-Stock

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$0.153

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1,077

$0.153

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Flip Electronics

USA . 150,000 parts In-Stock

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Chip Stock

USA . 38,000 parts In-Stock

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Vyrian

USA . 12,880 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.030

100+ parts

$0.027

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$0.025

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60

$0.030

$0.027

$0.025

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Corphita

USA . 1,396 parts In-Stock

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$0.145

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Corohmni

South Africa . 149 parts In-Stock

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$0.148

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149

$0.148

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Native Components

USA . 341 parts In-Stock

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$1.746

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341

$1.746

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Northwest PG Solutions

USA . 279 parts In-Stock

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$1.920

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Perfect Parts

USA . 137,760 parts In-Stock

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TANS Electronics

Latvia . 7,936 parts In-Stock

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Kulean Microsystems

USA . 6,264 parts In-Stock

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SupplyDigital Components

Austria . 4,904 parts In-Stock

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Problanco Electronics

Mexico . 2,585 parts In-Stock

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Overview

Unleash the power of protection with the ESD7102BT1G by Onsemi. As a leader in transient suppression devices, Onsemi ensures top-notch quality and reliability in their products. This diode type trans voltage suppressor diode boasts a unidirectional polarity and a maximum clamping voltage of 55V, making it perfect for safeguarding your electronics from harmful voltage spikes. With a compact design and matte tin terminal finish, this device offers peak performance even in extreme temperatures. Trust Onsemi to deliver superior technology that provides peace of mind for all your electronic applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the internal components of the device.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration allows for better protection against transient voltages, and having 2 elements increases the overall protection capability.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape is commonly used for easy integration into circuit designs.

Minimum Breakdown Voltage: 16.5 V

High minimum breakdown voltage provides effective protection against transient overvoltages.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that transient voltages are effectively clamped in one direction.

Technical Specifications

Transient Suppression Devices ESD7102BT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

16.5 V

Maximum Clamping Voltage:

55 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD7102BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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