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ESD7571N2T5G

Onsemi

ESD7571N2T5G by Onsemi

ESD7571N2T5G by Onsemi is a bidirectional Trans Voltage Suppressor Diode with 5.3V peak reverse voltage, suitable for transient suppression applications. It operates b/w -55°C to 150°C, complies with IEC-61000-4-2 and 4-5 standards, and has a power dissipation of 0.3W in a chip carrier package style.

Median Price

$0.042

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,594 parts In-Stock

1+ parts

$0.036

100+ parts

$0.034

1k+ parts

$0.031

10k+ parts

-

11,594

$0.036

$0.034

$0.031

-

DigiKey

USA . 701 parts In-Stock

1+ parts

$0.330

100+ parts

$0.110

1k+ parts

$0.064

10k+ parts

-

701

$0.330

$0.110

$0.064

-

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.038

10k+ parts

$0.037

16,000

-

-

$0.038

$0.037

Mouser Electronics

USA . 15,796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.042

15,796

-

-

-

$0.042

Element14

Singapore . 8,585 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.059

10k+ parts

$0.045

8,585

-

-

$0.059

$0.045

Farnell

UK . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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82

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 984 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

-

984

$0.034

-

-

-

Nova Conductors

Japan . 90 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

90

$0.067

-

-

-

Chip Stock

USA . 143,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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143,055

-

-

-

-

Prism Electronics

USA . 12,000 parts In-Stock

1+ parts

-

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12,000

-

-

-

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Vyrian

USA . 8,686 parts In-Stock

1+ parts

-

100+ parts

-

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8,686

-

-

-

-

Cyclops Electronics Ltd

UK . 8,257 parts In-Stock

1+ parts

-

100+ parts

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8,257

-

-

-

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Microfarads

USA . 4,990 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,990

-

-

-

-

Bristol Electronics

USA . 2,605 parts In-Stock

1+ parts

-

100+ parts

$0.094

1k+ parts

$0.056

10k+ parts

-

2,605

-

$0.094

$0.056

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,933 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

10k+ parts

-

8,933

$0.031

-

-

-

Corphita

USA . 891 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

-

891

$0.032

-

-

-

Corohmni

South Africa . 214 parts In-Stock

1+ parts

$0.036

100+ parts

-

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-

10k+ parts

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214

$0.036

-

-

-

Argo Parts USA

USA . 1,514 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

$0.065

1,514

$0.067

-

-

$0.065

Continental Prestige Electronics

USA . 13,355 parts In-Stock

1+ parts

$0.326

100+ parts

$0.126

1k+ parts

$0.049

10k+ parts

$0.034

13,355

$0.326

$0.126

$0.049

$0.034

Lixinc

USA . 13,122 parts In-Stock

1+ parts

-

100+ parts

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13,122

-

-

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Problanco Electronics

Mexico . 6,474 parts In-Stock

1+ parts

-

100+ parts

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6,474

-

-

-

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SupplyDigital Components

Austria . 3,105 parts In-Stock

1+ parts

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3,105

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-

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Kulean Microsystems

USA . 2,621 parts In-Stock

1+ parts

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2,621

-

-

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TANS Electronics

Latvia . 1,112 parts In-Stock

1+ parts

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100+ parts

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1,112

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-

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UHIMA Technologies

Türkiye . 39 parts In-Stock

1+ parts

-

100+ parts

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39

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Overview

Enhance your electronic devices with the ESD7571N2T5G by Onsemi - a top-quality Transient Suppression Device designed to protect against voltage spikes and surges. Manufactured by industry leader Onsemi, this chip carrier package boasts superior durability and reliability, making it ideal for a wide range of applications. From consumer electronics to industrial machinery, this bidirectional diode element provides peace of mind by safeguarding your valuable equipment. Trust in Onsemi's expertise and invest in the ESD7571N2T5G for unbeatable protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the device reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the device can withstand heat and perform reliably in various operating conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the device to function effectively in cold environments without risk of damage.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel/palladium/gold terminal finish provides excellent conductivity, corrosion resistance, and reliability for optimal performance.

Maximum Power Dissipation: 0.3 W

High maximum power dissipation capability ensures the device can handle transient surges and protect connected equipment effectively.

Minimum Breakdown Voltage: 7 V

Low minimum breakdown voltage allows the device to quickly clamp excessive voltages, protecting sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode provides rapid response to transient voltage spikes, preventing damage to downstream components.

Technology: AVALANCHE

Avalanche technology ensures the device can handle high energy transient events without sustaining damage or degradation.

Maximum Repetitive Peak Reverse Voltage: 5.3 V

Low maximum repetitive peak reverse voltage allows the device to quickly react to voltage spikes and protect sensitive electronics.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against both positive and negative transient voltage surges, enhancing overall system protection.

Technical Specifications

Transient Suppression Devices ESD7571N2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESD7571N2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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