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ESD7351XV2T1G

Onsemi

ESD7351XV2T1G by Onsemi

ESD7351XV2T1G by Onsemi is a unidirectional avalanche diode with a breakdown voltage of 5 V. It features a max clamping voltage of 10 V and is designed for transient suppression applications. This small outline device operates b/w -55°C to 150°C, meeting IEC-61000-4-5 standards.

Median Price

$0.107

Lifecycle Status

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20

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1k+

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Arrow

USA . 1,236 parts In-Stock

1+ parts

$0.118

100+ parts

$0.054

1k+ parts

$0.037

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$0.118

$0.054

$0.037

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Mouser Electronics

USA . 276,792 parts In-Stock

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$0.120

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$0.057

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$0.051

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$0.045

276,792

$0.120

$0.057

$0.051

$0.045

DigiKey

USA . 1,352 parts In-Stock

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$0.120

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$0.057

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$0.051

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$0.037

1,352

$0.120

$0.057

$0.051

$0.037

Newark

USA . 393 parts In-Stock

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$0.137

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EBV Elektronik

Germany . 2,064,000 parts In-Stock

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Master Electronics

USA . 18,000 parts In-Stock

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Farnell

UK . 4,950 parts In-Stock

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$0.059

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$0.034

4,950

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$0.059

$0.034

Element14

Singapore . 4,950 parts In-Stock

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$0.107

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$0.072

4,950

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$0.107

$0.072

Chip1Stop

Japan . 2,930 parts In-Stock

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$0.050

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$0.041

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$0.040

2,930

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$0.041

$0.040

Verical

USA . 1,236 parts In-Stock

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$0.037

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.078

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300

$0.078

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TME

Poland . 8,994 parts In-Stock

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$0.120

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$0.056

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$0.045

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Digiode

USA . 230 parts In-Stock

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NAC Semi

USA . 1,791,000 parts In-Stock

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$0.153

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Flip Electronics

USA . 904,000 parts In-Stock

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Chip Stock

USA . 144,200 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 1,658 parts In-Stock

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IBS Electronics

USA . 1,352 parts In-Stock

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1,352

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ComSIT Distribution GmbH

Germany . 686 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 111,974 parts In-Stock

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$0.035

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$0.034

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$0.034

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111,974

$0.035

$0.034

$0.034

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Ampacity Inc.

Singapore . 99,935 parts In-Stock

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$0.035

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Corohmni

South Africa . 131 parts In-Stock

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$0.041

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Aranea Global

USA . 100 parts In-Stock

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$0.076

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$0.073

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100

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Argo Parts USA

USA . 4,634 parts In-Stock

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$0.078

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$0.076

4,634

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$0.076

Aztec Data Supply Inc.

USA . 2,441 parts In-Stock

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$0.140

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$0.140

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Modulus Dynamics

Lithuania . 28,863 parts In-Stock

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$0.170

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Corphita

USA . 2,000 parts In-Stock

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$0.201

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Eastek

USA . 276,000 parts In-Stock

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GreenTree Electronics

Israel . 60,000 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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Robosynatics

Brazil . 14,063 parts In-Stock

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Lucentia Tech

USA . 14,063 parts In-Stock

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$0.088

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$0.086

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$0.086

14,063

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$0.088

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$0.086

Continental Prestige Electronics

USA . 13,505 parts In-Stock

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$0.093

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$0.063

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$0.041

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Lixinc

USA . 9,965 parts In-Stock

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SupplyDigital Components

Austria . 7,751 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,678 parts In-Stock

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TANS Electronics

Latvia . 5,315 parts In-Stock

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Problanco Electronics

Mexico . 4,346 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 3,785 parts In-Stock

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UHIMA Technologies

Türkiye . 968 parts In-Stock

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Kulean Microsystems

USA . 652 parts In-Stock

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Overview

The ESD7351XV2T1G by Onsemi is a top-quality transient suppression device that offers unparalleled protection for your electronic devices. Manufactured by Onsemi, a trusted name in the industry, this product guarantees superior performance and reliability. Ideal for a wide range of applications, this device ensures your equipment remains safe from voltage spikes and surges. With its innovative technology and high-quality materials, the ESD7351XV2T1G provides exceptional value, benefits, and advantages to customers looking for reliable protection for their electronics. Trust Onsemi to deliver excellence with the ESD7351XV2T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for this transient suppression device.

Config: SINGLE

The single configuration simplifies installation and reduces the complexity of the circuit design.

Surface Mount: YES

Being surface mountable makes this device easy to integrate onto PCBs, saving space and facilitating automated assembly processes.

Nominal Breakdown Voltage: 5 V

With a breakdown voltage of 5V, this device effectively protects sensitive electronics from voltage spikes and surges.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and alignment on the circuit board.

No. of Terminals: 2

Having only 2 terminals simplifies the connections and reduces possible points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient and suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable performance in colder climates.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good conductivity and resistance to corrosion.

Terminal Position: DUAL

The dual terminal position allows for flexibility in connecting the device to the circuit.

Maximum Power Dissipation: 0.15 W

The low power dissipation helps in minimizing energy loss and heat generation.

Minimum Breakdown Voltage: 5 V

A minimum breakdown voltage of 5V ensures reliable protection against voltage transients.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature reduces the risk of damage to the device during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures the device can withstand the soldering process.

Reference Standard: IEC-61000-4-5

Compliance with the IEC standard guarantees the device's quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient voltage suppression, offering reliable protection for electronics.

Technology: AVALANCHE

The avalanche technology provides fast response to voltage spikes, ensuring swift protection for connected devices.

Terminal Form: FLAT

The flat terminal form makes it easier to solder and ensures a secure connection.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

With a maximum repetitive peak reverse voltage of 3.3V, this device offers effective protection for sensitive components.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are clamped in one direction only, protecting the circuit from damage.

Maximum Clamping Voltage: 10 V

The maximum clamping voltage of 10V ensures that voltage spikes are limited to a safe level for connected electronics.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high reliability and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD7351XV2T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Reference Standard:

IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD7351XV2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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