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ESD7331MUT5G

Onsemi

ESD7331MUT5G by Onsemi

ESD7331MUT5G by Onsemi is a single bidirectional avalanche diode with 3.3V reverse voltage, 7.5V clamping voltage, and 1uA max reverse current. It is used for transient suppression in applications requiring protection against ESD events at temperatures ranging from -55 to 150°C.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,498 parts In-Stock

1+ parts

$0.175

100+ parts

$0.069

1k+ parts

$0.037

10k+ parts

-

2,498

$0.175

$0.069

$0.037

-

Rochester

USA . 999,307 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.030

999,307

-

$0.040

$0.033

$0.030

Verical

USA . 999,239 parts In-Stock

1+ parts

-

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-

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-

10k+ parts

$0.042

999,239

-

-

-

$0.042

Mouser Electronics

USA . 236,009 parts In-Stock

1+ parts

-

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$0.040

236,009

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$0.040

DigiKey

USA . 26,864 parts In-Stock

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26,864

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Flip Electronics (Authorized)

USA . 9,780 parts In-Stock

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9,780

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Chip1Stop

Japan . 7,538 parts In-Stock

1+ parts

-

100+ parts

$0.028

1k+ parts

$0.025

10k+ parts

-

7,538

-

$0.028

$0.025

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,512 parts In-Stock

1+ parts

$0.031

100+ parts

-

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1,512

$0.031

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Vyrian

USA . 1,043 parts In-Stock

1+ parts

$0.033

100+ parts

-

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1,043

$0.033

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.059

100+ parts

-

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100

$0.059

-

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Flip Electronics

USA . 26,864 parts In-Stock

1+ parts

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100+ parts

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26,864

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 340,101 parts In-Stock

1+ parts

$0.028

100+ parts

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340,101

$0.028

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Corphita

USA . 297 parts In-Stock

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$0.030

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297

$0.030

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Corohmni

South Africa . 128 parts In-Stock

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$0.033

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128

$0.033

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Argo Parts USA

USA . 4,395 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

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10k+ parts

$0.057

4,395

$0.059

-

-

$0.057

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.059

100+ parts

$0.058

1k+ parts

-

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100

$0.059

$0.058

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-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.061

100+ parts

$0.060

1k+ parts

$0.058

10k+ parts

-

500

$0.061

$0.060

$0.058

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Aztec Data Supply Inc.

USA . 4,772 parts In-Stock

1+ parts

$0.192

100+ parts

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4,772

$0.192

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Continental Prestige Electronics

USA . 1,775,000 parts In-Stock

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$0.040

1,775,000

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$0.040

RC Electronics

USA . 129,325 parts In-Stock

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129,325

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Perfect Parts

USA . 54,273 parts In-Stock

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Lixinc

USA . 19,206 parts In-Stock

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SupplyDigital Components

Austria . 8,183 parts In-Stock

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TANS Electronics

Latvia . 3,842 parts In-Stock

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Kulean Microsystems

USA . 3,100 parts In-Stock

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Problanco Electronics

Mexico . 1,303 parts In-Stock

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UHIMA Technologies

Türkiye . 549 parts In-Stock

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549

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Formix International (Excess)

India . 180 parts In-Stock

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180

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Experience superior protection against transient voltage spikes with the ESD7331MUT5G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Transient Suppression Devices designed for a wide range of applications. This single configuration chip carrier offers customers peace of mind with its low reverse current, bidirectional polarity, and maximum clamping voltage of 7.5V. Trust in Onsemi's expertise to safeguard your electronics and ensure reliable performance in demanding environments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection against environmental factors, making the device durable and reliable.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Minimum Breakdown Voltage: 4 V

Higher breakdown voltage ensures effective protection against voltage spikes and surges, making the device suitable for a wide range of applications.

Maximum Clamping Voltage: 7.5 V

The clamping voltage limits the maximum voltage across the device during a transient event, preventing damage to sensitive electronic components.

Technical Specifications

Transient Suppression Devices ESD7331MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Minimum Breakdown Voltage:

4 V

Maximum Clamping Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD7331MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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