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ESD752DCKR

Texas Instruments

ESD752DCKR by Texas Instruments

ESD752DCKR by Texas Instruments is a transient suppression device with 2 elements, common anode config, and bidirectional polarity. It has a breakdown voltage of 30.5V, clamping voltage of 33V, and max power dissipation of 210W. Ideal for protecting sensitive electronics from voltage spikes in various applications.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 863,388 parts In-Stock

1+ parts

$0.201

100+ parts

$0.137

1k+ parts

$0.070

10k+ parts

-

863,388

$0.201

$0.137

$0.070

-

DigiKey

USA . 10,459 parts In-Stock

1+ parts

$0.310

100+ parts

$0.163

1k+ parts

$0.137

10k+ parts

$0.123

10,459

$0.310

$0.163

$0.137

$0.123

Mouser Electronics

USA . 4,729 parts In-Stock

1+ parts

$0.310

100+ parts

$0.151

1k+ parts

$0.137

10k+ parts

$0.119

4,729

$0.310

$0.151

$0.137

$0.119

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,460 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

4,460

$0.114

-

-

-

Digiode

USA . 1,154 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

-

1,154

$0.191

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 293,491 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

-

293,491

$0.097

-

-

-

Corohmni

South Africa . 334 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$0.114

-

-

-

Corphita

USA . 3,808 parts In-Stock

1+ parts

$0.181

100+ parts

-

1k+ parts

-

10k+ parts

-

3,808

$0.181

-

-

-

Semicontronic

India . 293,526 parts In-Stock

1+ parts

$0.211

100+ parts

$0.206

1k+ parts

$0.205

10k+ parts

-

293,526

$0.211

$0.206

$0.205

-

Northwest PG Solutions

USA . 126 parts In-Stock

1+ parts

-

100+ parts

-

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126

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-

-

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Native Components

USA . 14 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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14

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-

-

Overview

Enhance the reliability and performance of your electronic devices with the ESD752DCKR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and innovation in their Transient Suppression Devices. This compact yet powerful device offers superior protection against voltage spikes and surges, making it ideal for a wide range of applications. Trust in Texas Instruments to deliver cutting-edge technology that provides peace of mind and unmatched value to customers looking for reliable transient suppression solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device, ensuring long-term reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 210 W

Can handle high surges of power without being damaged, offering robust protection against transient voltages.

Nominal Breakdown Voltage: 30.5 V

Ensures that the device activates at the specified voltage threshold, offering precise protection for sensitive electronic components.

Minimum Breakdown Voltage: 25.5 V

Provides a safety margin below the nominal breakdown voltage, enhancing the reliability of the device in varying operating conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes specialized diodes designed for transient voltage suppression, offering superior protection compared to standard diodes.

Technology: AVALANCHE

Utilizes avalanche breakdown for fast response times and low clamping voltages, ensuring efficient suppression of transient voltages.

Technical Specifications

Transient Suppression Devices ESD752DCKR attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

35.5 V

Minimum Breakdown Voltage:

25.5 V

Nominal Breakdown Voltage:

30.5 V

Maximum Clamping Voltage:

33 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

210 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5; IEC-62026-3

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD752DCKR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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