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SZESD8351XV2T5G

Onsemi

SZESD8351XV2T5G by Onsemi

SZESD8351XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a 7.8V max breakdown voltage and 11.2V clamping voltage, suitable for transient suppression applications. It features a small outline package style, matte tin terminal finish, and operates b/w -55 to 125 °C temperature range. Ideal for protecting sensitive electronics from voltage spikes in automotive and industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 39,000 parts In-Stock

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39,000

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Vyrian

USA . 6,202 parts In-Stock

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6,202

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Digiode

USA . 1,026 parts In-Stock

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1,026

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.067

100+ parts

$0.061

1k+ parts

$0.055

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50

$0.067

$0.061

$0.055

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AZTECH Wire

Italy . 722 parts In-Stock

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$11.180

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722

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Kulean Microsystems

USA . 3,875 parts In-Stock

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3,875

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SupplyDigital Components

Austria . 3,041 parts In-Stock

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Corphita

USA . 2,359 parts In-Stock

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2,359

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TANS Electronics

Latvia . 579 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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368

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Problanco Electronics

Mexico . 193 parts In-Stock

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Overview

Enhance your electronic designs with the SZESD8351XV2T5G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality transient suppression devices that provide reliable protection against voltage spikes. Suitable for a wide range of applications, this product ensures optimum performance and durability. Trust Onsemi to provide you with the value, benefits, and advantages you need for your projects. Upgrade your designs today with the SZESD8351XV2T5G and experience peace of mind knowing your electronics are safeguarded.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a durable and lightweight construction, making the product suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance, ideal for straightforward setups.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and facilitating efficient design layouts.

Nominal Breakdown Voltage: 7 V

The nominal breakdown voltage of 7 V provides reliable protection against voltage spikes, ensuring the safety of connected electronic devices.

Maximum Reverse Current: 0.5 uA

With a low maximum reverse current, the product efficiently suppresses excess currents during transient events, enhancing overall circuit protection.

Package Shape: RECTANGULAR

The rectangular package shape aids in easy placement and secure mounting within electronic systems.

Reverse Test Voltage: 3.3 V

The reverse test voltage of 3.3 V ensures effective protection against reverse currents, safeguarding sensitive components.

No. of Terminals: 2

Having 2 terminals simplifies the connection process, making it easier to integrate the device into circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the product can withstand high temperatures, ensuring reliability in diverse environmental conditions.

Minimum Operating Temperature: -55 °C

The minimum operating temperature of -55 °C enables the device to function effectively in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable connection and enhances the product's overall durability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit configurations and simplifies installation.

Minimum Breakdown Voltage: 5.5 V

The minimum breakdown voltage of 5.5 V ensures protection against lower voltage spikes, enhancing the product's effectiveness.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the product can withstand reflow processes during assembly without compromising its performance.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for efficient soldering during assembly, ensuring secure connections.

Maximum Breakdown Voltage: 7.8 V

The maximum breakdown voltage of 7.8 V provides an extra margin of safety, offering enhanced protection against higher voltage spikes.

Reference Standard: AEC-Q101, IEC-61000-4-2

Compliance with AEC-Q101 and IEC-61000-4-2 standards ensures the product meets industry requirements for quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type is specifically designed for transient suppression, offering effective protection against voltage spikes.

Technology: AVALANCHE

Utilizing avalanche technology enhances the product's ability to handle high-energy transients, increasing its reliability in challenging environments.

Terminal Form: FLAT

The flat terminal form provides a stable and secure connection, ensuring consistent performance in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

The maximum repetitive peak reverse voltage of 3.3 V protects against continuous reverse currents, maintaining the integrity of connected devices.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that transient voltages are safely clamped in one direction, preventing damage to downstream components.

Maximum Clamping Voltage: 11.2 V

With a maximum clamping voltage of 11.2 V, the device effectively limits the voltage during transient events, safeguarding sensitive electronics.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability in transient suppression, making the product a durable choice for circuit protection.

Technical Specifications

Transient Suppression Devices SZESD8351XV2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

7.8 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD8351XV2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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