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NUP2128WTT1G

Onsemi

NUP2128WTT1G by Onsemi

NUP2128WTT1G by Onsemi is a Transient Suppression Device with 2 bidirectional elements. It has a breakdown voltage of 31V, clamping voltage of 55V, and can handle up to 165W power dissipation. Ideal for surge protection in automotive electronics due to its avalanche technology and compliance with IEC and ISO standards.

Median Price

$0.445

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 3,000 parts In-Stock

1+ parts

$0.430

100+ parts

$0.185

1k+ parts

$0.142

10k+ parts

$0.091

3,000

$0.430

$0.185

$0.142

$0.091

Mouser Electronics

USA . 521 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

$0.372

10k+ parts

$0.085

521

$0.460

-

$0.372

$0.085

Flip Electronics (Authorized)

USA . 66,000 parts In-Stock

1+ parts

-

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66,000

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Distributors (In-Stock)

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Digiode

USA . 86 parts In-Stock

1+ parts

$0.408

100+ parts

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86

$0.408

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Flip Electronics

USA . 66,000 parts In-Stock

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66,000

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Vyrian

USA . 5,586 parts In-Stock

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5,586

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.334

100+ parts

$0.093

1k+ parts

$0.072

10k+ parts

-

3,000

$0.334

$0.093

$0.072

-

Ampacity Inc.

Singapore . 23,269 parts In-Stock

1+ parts

$0.365

100+ parts

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23,269

$0.365

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Corphita

USA . 2,270 parts In-Stock

1+ parts

$0.387

100+ parts

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2,270

$0.387

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Corohmni

South Africa . 139 parts In-Stock

1+ parts

$0.430

100+ parts

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139

$0.430

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Perfect Parts

USA . 7,739 parts In-Stock

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7,739

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SupplyDigital Components

Austria . 6,450 parts In-Stock

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6,450

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Problanco Electronics

Mexico . 6,043 parts In-Stock

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6,043

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Kulean Microsystems

USA . 3,121 parts In-Stock

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3,121

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 1,092 parts In-Stock

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1,092

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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77

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Overview

Looking for reliable transient suppression devices? Look no further than the NUP2128WTT1G by Onsemi. With a maximum non-repetitive peak reverse power dissipation of 165W and a nominal breakdown voltage of 31V, this diode offers top-notch protection against voltage spikes. Whether you're in the automotive industry or working with industrial equipment, this common anode, 2-element device is a must-have. Trust Onsemi's reputation for quality and choose the NUP2128WTT1G for peace of mind and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 165 W

High power dissipation capability allows the device to handle transient voltage spikes effectively without damage.

Nominal Breakdown Voltage: 31 V

Accurate breakdown voltage specification ensures reliable protection against overvoltage events.

Maximum Reverse Current: 0.1 uA

Low reverse current minimizes power consumption and enhances efficiency of the device.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function effectively in various environmental conditions.

Technical Specifications

Transient Suppression Devices NUP2128WTT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

35.5 V

Minimum Breakdown Voltage:

27.5 V

Nominal Breakdown Voltage:

31 V

Maximum Clamping Voltage:

55 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

165 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

165 W

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

Maximum Repetitive Peak Reverse Voltage:

26.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

26.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUP2128WTT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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