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NUP2105LT3

Onsemi

NUP2105LT3 by Onsemi

NUP2105LT3 by Onsemi is a Transient Suppression Device with 2 ELEMENTS in COMMON ANODE config. It has a Max Non Repetitive Peak Reverse Power Dissipation of 350W and Breakdown Voltage of 29.1V. Ideal for applications requiring bidirectional protection against voltage transients at temperatures ranging from -55°C to 150°C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 1,186 parts In-Stock

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Digiode

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Nova Conductors

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Semicontronic

India . 339 parts In-Stock

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Aztec Data Supply Inc.

USA . 333 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Ampacity Inc.

Singapore . 856 parts In-Stock

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AZTECH Wire

Italy . 592 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Argo Parts USA

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Corphita

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TANS Electronics

Latvia . 1,812 parts In-Stock

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Continental Prestige Electronics

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SupplyDigital Components

Austria . 794 parts In-Stock

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Corohmni

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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Modulus Dynamics

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Bastille Electronics

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Overview

Protect your valuable electronics with the NUP2105LT3 by Onsemi. As a leader in transient suppression devices, Onsemi ensures top-notch quality and reliability in every product they create. The NUP2105LT3 is perfect for applications requiring protection against voltage transients, offering peace of mind and safeguarding your equipment. With a maximum non-repetitive peak reverse power dissipation of 350W and a bidirectional polarity, this device provides superior protection against voltage spikes. Trust Onsemi to deliver cutting-edge technology that keeps your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Nominal Breakdown Voltage: 29.1 V

Specifically designed to trigger at the specified voltage, providing effective protection against transient voltage spikes.

Maximum Operating Temperature: 150 °C

Can handle high temperatures, making it suitable for various industrial and automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient suppression, ensuring superior performance in protecting sensitive electronic components.

Technical Specifications

Transient Suppression Devices NUP2105LT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP2105LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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