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NUP2115LT1G

Onsemi

NUP2115LT1G by Onsemi

NUP2115LT1G by Onsemi is a Zener diode with common anode, 2 elements, and bidirectional polarity. It has a max clamping voltage of 44V and breakdown voltage of 29.1V. Ideal for transient suppression in applications requiring protection against voltage spikes up to 200W.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,175 parts In-Stock

1+ parts

$0.150

100+ parts

$0.143

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$0.137

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$0.150

$0.143

$0.137

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Newark

USA . 1,014 parts In-Stock

1+ parts

$0.371

100+ parts

$0.247

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$0.175

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1,014

$0.371

$0.247

$0.175

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Mouser Electronics

USA . 955 parts In-Stock

1+ parts

$0.770

100+ parts

$0.307

1k+ parts

$0.190

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$0.152

955

$0.770

$0.307

$0.190

$0.152

Chip1Stop

Japan . 2,270 parts In-Stock

1+ parts

$1.020

100+ parts

$0.587

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$0.438

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2,270

$1.020

$0.587

$0.438

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Farnell

UK . 111,140 parts In-Stock

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$0.290

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Flip Electronics (Authorized)

USA . 47,900 parts In-Stock

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Rochester

USA . 6,110 parts In-Stock

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Verical

USA . 4,610 parts In-Stock

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$0.157

4,610

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$0.157

DigiKey

USA . 1,979 parts In-Stock

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$0.152

1,979

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$0.152

Element14

Singapore . 395 parts In-Stock

1+ parts

-

100+ parts

$0.458

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$0.313

10k+ parts

$0.278

395

-

$0.458

$0.313

$0.278

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,335 parts In-Stock

1+ parts

$0.258

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2,335

$0.258

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Nova Conductors

Japan . 10 parts In-Stock

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$0.332

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10

$0.332

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 33,598 parts In-Stock

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Flip Electronics

USA . 9,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 33,509 parts In-Stock

1+ parts

$0.231

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33,509

$0.231

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Corphita

USA . 1,043 parts In-Stock

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$0.245

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$0.245

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Corohmni

South Africa . 388 parts In-Stock

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$0.248

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388

$0.248

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Aranea Global

USA . 1,000 parts In-Stock

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$0.325

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$0.312

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1,000

$0.325

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$0.312

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Argo Parts USA

USA . 2,297 parts In-Stock

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$0.332

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$0.322

2,297

$0.332

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$0.322

Continental Prestige Electronics

USA . 111,140 parts In-Stock

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$0.330

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Kepictronics

USA . 33,809 parts In-Stock

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Perfect Parts

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Lixinc

USA . 13,178 parts In-Stock

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SupplyDigital Components

Austria . 6,517 parts In-Stock

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Kulean Microsystems

USA . 4,647 parts In-Stock

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TANS Electronics

Latvia . 3,364 parts In-Stock

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Authorized Procurement Solutions

USA . 2,970 parts In-Stock

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GreenTree Electronics

Israel . 2,470 parts In-Stock

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UHIMA Technologies

Türkiye . 243 parts In-Stock

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Problanco Electronics

Mexico . 109 parts In-Stock

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Overview

Discover the innovative NUP2115LT1G by Onsemi, a top-of-the-line Transient Suppression Device designed to protect your electronics with precision and reliability. Manufactured by industry leader Onsemi, this product offers superior quality and performance, making it an ideal choice for a wide range of applications. With its advanced technology and durable construction, the NUP2115LT1G provides exceptional value by safeguarding your devices from power surges and voltage spikes. Trust Onsemi to deliver cutting-edge solutions that exceed expectations and keep your equipment safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the internal components of the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

The high power dissipation capability of 200W ensures that the device can effectively handle transient surge events without being damaged.

Nominal Breakdown Voltage: 29.1 V

The nominal breakdown voltage of 29.1V indicates that the device can effectively suppress transient voltage spikes above this level to protect connected electronics.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the device to function reliably in a wide range of environmental conditions.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

The compliance with international standards such as IEC-61000-4-2, 4-4, and 4-5 ensures that the device meets quality and safety requirements.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of transient voltage spikes and protection of electronic devices.

Maximum Clamping Voltage: 44 V

The maximum clamping voltage of 44V specifies the level at which the device will limit transient voltages, preventing damage to connected equipment.

Technology: ZENER

The Zener technology used in the device allows for precise voltage regulation and effective suppression of transient voltage spikes.

No. of Elements: 2

The 2-element design provides redundancy and increased protection capacity against transient voltage events.

Polarity: BIDIRECTIONAL

The bidirectional polarity of the device allows for protection against transient voltage spikes in both directions, making it versatile and effective in varied applications.

Technical Specifications

Transient Suppression Devices NUP2115LT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NUP2115LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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