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NUP2105LT3G

Onsemi

NUP2105LT3G by Onsemi

NUP2105LT3G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, offering bidirectional protection. It has a max clamping voltage of 44V and can handle non-repetitive peak reverse power dissipation up to 350W. Commonly used in applications requiring transient suppression for voltages b/w 26.2V to 32V.

Median Price

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Lifecycle Status

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Aztec Data Supply Inc.

USA . 338 parts In-Stock

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Semicontronic

India . 798 parts In-Stock

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Ampacity Inc.

Singapore . 624 parts In-Stock

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AZTECH Wire

Italy . 273 parts In-Stock

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RC Electronics

USA . 99,109 parts In-Stock

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TANS Electronics

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Lucentia Tech

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Overview

Enhance your electronics with the NUP2105LT3G by Onsemi, a top-quality transient suppression device that offers superior protection against voltage spikes. Manufactured by Onsemi, a trusted industry leader, this product is designed for common anode applications and boasts a small outline package style for easy integration. Whether you're working on industrial equipment, automotive systems, or consumer electronics, this diode type trans voltage suppressor diode is sure to deliver reliable performance, providing peace of mind and safeguarding your valuable devices from potential damage. Trust Onsemi for exceptional quality and innovation in transient suppression technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to environmental factors, ensuring long-term reliability.

Nominal Breakdown Voltage: 29.1 V

The nominal breakdown voltage of 29.1 V allows for effective protection against voltage spikes or surges within that range, safeguarding connected components.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high maximum non-repetitive peak reverse power dissipation of 350 W, this device can handle sudden high power surges without damage, providing robust transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient transient voltage suppression by quickly diverting excess voltage away from sensitive components.

Maximum Clamping Voltage: 44 V

The maximum clamping voltage of 44 V limits the voltage across the protected circuit to a safe level, preventing damage to downstream electronics.

Technical Specifications

Transient Suppression Devices NUP2105LT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NUP2105LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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