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NUP2201MR6T1

Onsemi

NUP2201MR6T1 by Onsemi

NUP2201MR6T1 by Onsemi is a unidirectional avalanche diode with 500W peak power dissipation and 20V clamping voltage. It is used for transient suppression in applications requiring a small outline, surface-mount device with 6 terminals.

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6

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1k+

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Chip Stock

USA . 30,500 parts In-Stock

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Vyrian

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Semi Source

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Digiode

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Electronics Depot

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 2,383 parts In-Stock

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$0.110

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Ampacity Inc.

Singapore . 1,508 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 568 parts In-Stock

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$7.570

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Problanco Electronics

Mexico . 6,523 parts In-Stock

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Kulean Microsystems

USA . 6,482 parts In-Stock

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SupplyDigital Components

Austria . 4,482 parts In-Stock

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Continental Prestige Electronics

USA . 4,208 parts In-Stock

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TANS Electronics

Latvia . 1,933 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 673 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Argo Parts USA

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Corohmni

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Overview

Maximize your protection with the NUP2201MR6T1 by Onsemi, a top-of-the-line Transient Suppression Device that offers unmatched quality and reliability. Designed with cutting-edge technology and expertise from Onsemi, this diode is perfect for safeguarding your electronic components from voltage spikes and surges. Whether you're in the automotive, industrial, or consumer electronics industry, this device provides peace of mind and ensures optimal performance. Invest in the best with Onsemi's NUP2201MR6T1 and experience superior protection like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

Can handle high levels of power surges, making it suitable for applications where protection against transient voltage spikes is critical.

Package Style (Meter): SMALL OUTLINE

Compact design allows for easy integration into a variety of electronic devices without taking up much space.

Minimum Breakdown Voltage: 6 V

Provides reliable protection against voltage surges above 6 V, safeguarding connected devices from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed to suppress voltage spikes and protect electronic components from transient overvoltages, ensuring the safety and longevity of the system.

Technology: AVALANCHE

Avalanche diode technology allows for quick response time to transient voltage events, effectively clamping the voltage to a safe level before it can damage the system.

Technical Specifications

Transient Suppression Devices NUP2201MR6T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP2201MR6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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