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NUP2115LT3G

Onsemi

NUP2115LT3G by Onsemi

NUP2115LT3G by Onsemi is a Zener diode with 2 elements, offering bidirectional protection. It has a breakdown voltage range of 26.2-32V and can handle up to 200W peak power dissipation. Commonly used in transient suppression applications due to its IEC-61000-4-2, 4-4, 4-5 compliance.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,241 parts In-Stock

1+ parts

$0.770

100+ parts

$0.307

1k+ parts

$0.190

10k+ parts

$0.143

2,241

$0.770

$0.307

$0.190

$0.143

DigiKey

USA . 1,314 parts In-Stock

1+ parts

$0.770

100+ parts

$0.307

1k+ parts

$0.209

10k+ parts

$0.168

1,314

$0.770

$0.307

$0.209

$0.168

Flip Electronics (Authorized)

USA . 150,000 parts In-Stock

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Rochester

USA . 49,266 parts In-Stock

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$0.170

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$0.141

10k+ parts

$0.126

49,266

-

$0.170

$0.141

$0.126

Farnell

UK . 49,266 parts In-Stock

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$0.105

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$0.105

Verical

USA . 49,266 parts In-Stock

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$0.157

49,266

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$0.157

Distributors (In-Stock)

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Digiode

USA . 369 parts In-Stock

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$0.132

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369

$0.132

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Nova Conductors

Japan . 85 parts In-Stock

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$0.253

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$0.253

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Flip Electronics

USA . 200,000 parts In-Stock

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 52,534 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.057

100+ parts

$0.052

1k+ parts

$0.047

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350

$0.057

$0.052

$0.047

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Ampacity Inc.

Singapore . 52,706 parts In-Stock

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$0.089

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$0.089

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Corohmni

South Africa . 264 parts In-Stock

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$0.105

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Corphita

USA . 2,362 parts In-Stock

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$0.125

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Aranea Global

USA . 50 parts In-Stock

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$0.248

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$0.238

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$0.248

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$0.238

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Argo Parts USA

USA . 3,442 parts In-Stock

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$0.253

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$0.246

3,442

$0.253

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$0.246

Continental Prestige Electronics

USA . 2,593 parts In-Stock

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$0.253

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$0.248

2,593

$0.253

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$0.248

Kepictronics

USA . 69,000 parts In-Stock

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SupplyDigital Components

Austria . 7,858 parts In-Stock

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Problanco Electronics

Mexico . 4,510 parts In-Stock

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TANS Electronics

Latvia . 3,617 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 2,470 parts In-Stock

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Kulean Microsystems

USA . 682 parts In-Stock

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UHIMA Technologies

Türkiye . 239 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the NUP2115LT3G by Onsemi. With a maximum non-repetitive peak reverse power dissipation of 200W and a nominal breakdown voltage of 29.1V, this product offers top-notch quality and performance. Perfect for applications requiring protection against voltage transients, this common anode diode pack is sure to provide the peace of mind you need. Trust in Onsemi's expertise in semiconductor manufacturing and invest in the NUP2115LT3G for robust protection and unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to shocks and vibrations, making the product reliable in various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

Ensures the device can handle sudden power surges effectively without damage, offering protection to connected equipment.

Nominal Breakdown Voltage: 29.1 V

Accurate breakdown voltage specification ensures precise protection levels for sensitive components.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function effectively in both high and low temperature environments.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards ensures the product meets quality and safety requirements for transient suppression devices.

Technical Specifications

Transient Suppression Devices NUP2115LT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NUP2115LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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