Loading...

SZNZL5V6AXV3T1G

Onsemi

SZNZL5V6AXV3T1G by Onsemi

SZNZL5V6AXV3T1G by Onsemi is a Transient Suppression Device with 5.6V Breakdown Voltage, 5uA Reverse Current, and AVALANCHE technology. Commonly used for surge protection in automotive electronics due to its AEC-Q101 compliance and compact SMALL OUTLINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,000

-

-

-

-

Vyrian

USA . 12,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,350

-

-

-

-

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

870

-

-

-

-

Digiode

USA . 196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

196

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 637 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

637

$2.010

-

-

-

AZTECH Wire

Italy . 482 parts In-Stock

1+ parts

$9.313

100+ parts

-

1k+ parts

-

10k+ parts

-

482

$9.313

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Problanco Electronics

Mexico . 7,093 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,093

-

-

-

-

SupplyDigital Components

Austria . 5,723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,723

-

-

-

-

TANS Electronics

Latvia . 3,121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,121

-

-

-

-

Corphita

USA . 2,051 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,051

-

-

-

-

Kulean Microsystems

USA . 840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

840

-

-

-

-

UHIMA Technologies

Türkiye . 777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

777

-

-

-

-

Corohmni

South Africa . 462 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

462

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Overview

Protect your electronics with the SZNZL5V6AXV3T1G by Onsemi, a high-quality transient suppression device designed to safeguard against voltage spikes and surges. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product offers peace of mind and reliability for a wide range of applications. With a common anode configuration and dual terminals, this device provides superior protection with a nominal breakdown voltage of 5.6V. Ensure the longevity of your electronic devices with the SZNZL5V6AXV3T1G, backed by Onsemi's reputation for excellence and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the device, ensuring a longer lifespan.

Nominal Breakdown Voltage: 5.6 V

The breakdown voltage is at an optimal level for protecting electronic components from voltage spikes, making this product reliable.

Maximum Reverse Current: 5 uA

The low reverse current helps in minimizing power loss and improving efficiency of the device.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering during assembly, leading to a robust and reliable connection.

Technical Specifications

Transient Suppression Devices SZNZL5V6AXV3T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.24 W

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNZL5V6AXV3T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4