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SZNZL6V8AXV3T1G

Onsemi

SZNZL6V8AXV3T1G by Onsemi

SZNZL6V8AXV3T1G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, common anode config, and 6.8V breakdown voltage. It is used for transient suppression in applications requiring protection against voltage spikes or surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 11,094 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Digiode

USA . 567 parts In-Stock

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567

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Ampacity Inc.

Singapore . 1,615 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 1,588 parts In-Stock

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$3.010

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$2.935

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$2.920

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$3.010

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AZTECH Wire

Italy . 424 parts In-Stock

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$7.628

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Component Stockers USA

USA . 618 parts In-Stock

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$99.990

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618

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 4,646 parts In-Stock

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Continental Prestige Electronics

USA . 3,732 parts In-Stock

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Kulean Microsystems

USA . 3,667 parts In-Stock

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TANS Electronics

Latvia . 2,642 parts In-Stock

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Corphita

USA . 2,096 parts In-Stock

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Argo Parts USA

USA . 1,700 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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SupplyDigital Components

Austria . 274 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Experience superior protection with the SZNZL6V8AXV3T1G by Onsemi. As a leader in transient suppression devices, Onsemi delivers unparalleled quality and reliability. Ideal for a wide range of applications, this product offers customers peace of mind knowing their electronics are safeguarded against voltage surges. With common anode configuration and advanced technology, the SZNZL6V8AXV3T1G provides maximum protection with minimal power dissipation. Trust Onsemi to provide the best-in-class solutions for your electronic protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside.

Nominal Breakdown Voltage: 6.8 V

Offers reliable protection by clamping excess voltage to a safe level.

Maximum Reverse Current: 1 uA

Ensures minimal leakage current for better overall performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various applications.

Terminal Finish: MATTE TIN

Provides good conductivity and corrosion resistance.

Maximum Power Dissipation: 0.24 W

Designed to handle power surges effectively without damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering superior protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for fast response to transient events.

Technical Specifications

Transient Suppression Devices SZNZL6V8AXV3T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.46 V

Nominal Breakdown Voltage:

6.8 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.24 W

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

4.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

4.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNZL6V8AXV3T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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