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SZNZQA5V6AXV5T1G

Onsemi

SZNZQA5V6AXV5T1G by Onsemi

SZNZQA5V6AXV5T1G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a breakdown voltage of 5.6 V, max power dissipation of 20 W, and operates b/w -55 to 150 °C. Ideal for protecting circuits from voltage spikes in various electronic applications.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 103,590 parts In-Stock

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Vyrian

USA . 258 parts In-Stock

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DigiKey Marketplace

USA . 103,590 parts In-Stock

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Flip Electronics

USA . 75,590 parts In-Stock

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Digiode

USA . 1,646 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 377 parts In-Stock

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TANS Electronics

Latvia . 7,979 parts In-Stock

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Problanco Electronics

Mexico . 7,735 parts In-Stock

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SupplyDigital Components

Austria . 4,114 parts In-Stock

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Kulean Microsystems

USA . 3,891 parts In-Stock

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Corphita

USA . 231 parts In-Stock

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UHIMA Technologies

Türkiye . 109 parts In-Stock

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Overview

Discover the ultimate solution for protecting your electronic devices with the SZNZQA5V6AXV5T1G by Onsemi. Designed with top-quality materials and advanced technology, this transient suppression device offers unmatched reliability and performance. Whether you're safeguarding sensitive circuits in automotive, industrial, or consumer electronics applications, this product delivers superior protection against voltage transients. Trust in Onsemi's expertise and invest in the peace of mind that comes with knowing your equipment is safe and secure. Choose the SZNZQA5V6AXV5T1G for unbeatable quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to damage, making the device long-lasting and reliable.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements allows for effective transient suppression and protection of connected devices.

Surface Mount: YES

Surface mount capability makes installation easy and convenient in various electronic applications.

Nominal Breakdown Voltage: 5.6 V

Suitable nominal breakdown voltage ensures protection against voltage spikes and surges within the specified range.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Maximum Clamping Voltage: 13 V

Efficient maximum clamping voltage helps in limiting the voltage spikes to a safe level, protecting sensitive electronics.

Technical Specifications

Transient Suppression Devices SZNZQA5V6AXV5T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.9 V

Minimum Breakdown Voltage:

5.3 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

13 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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