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NSPU3051N2T5G

Onsemi

NSPU3051N2T5G by Onsemi

NSPU3051N2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 5.7V min breakdown voltage and 9.1V max breakdown voltage. It operates b/w -65°C to 150°C, complies with IEC-61000-4-2, 4-5 standards, and is ideal for transient suppression applications.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

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Chip1Stop

Japan . 140 parts In-Stock

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$0.460

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Nova Conductors

Japan . 50 parts In-Stock

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$0.076

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Chip Stock

USA . 162,500 parts In-Stock

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Vyrian

USA . 7,367 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,044 parts In-Stock

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Digiode

USA . 1,647 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.035

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$0.032

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$0.029

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Corohmni

South Africa . 135 parts In-Stock

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$0.074

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Netroflash

USA . 2,000 parts In-Stock

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$0.076

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$0.072

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$0.070

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Continental Prestige Electronics

USA . 29,529 parts In-Stock

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$0.391

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$0.137

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$0.065

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$0.044

29,529

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$0.137

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$0.044

Ampacity Inc.

Singapore . 13,236 parts In-Stock

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AZTECH Wire

Italy . 903 parts In-Stock

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iodParts Technologies Inc.

India . 16,000 parts In-Stock

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Lixinc

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Problanco Electronics

Mexico . 5,831 parts In-Stock

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TANS Electronics

Latvia . 5,429 parts In-Stock

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Kulean Microsystems

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Corphita

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SupplyDigital Components

Austria . 1,692 parts In-Stock

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's NSPU3051N2T5G transient suppression device. Designed for a wide range of applications, this single-configured chip carrier offers unbeatable protection with its unidirectional polarity and avalanche technology. With a maximum clamping voltage of 9.5V, this device ensures your sensitive electronics stay safe from voltage spikes. Trust Onsemi's proven track record of excellence and choose the NSPU3051N2T5G for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-term reliability.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power dissipation and energy wastage during operation.

Minimum Breakdown Voltage: 5.7 V

Provides effective protection against voltage spikes and surges, safeguarding connected components.

Technology: AVALANCHE

Avalanche diode technology allows for rapid response to transients, enhancing overall performance.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with industry standards ensures reliability and compatibility with various applications.

Technical Specifications

Transient Suppression Devices NSPU3051N2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

9.1 V

Minimum Breakdown Voltage:

5.7 V

Maximum Clamping Voltage:

9.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPU3051N2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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