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NSPU5221MUTBG

Onsemi

NSPU5221MUTBG by Onsemi

NSPU5221MUTBG by Onsemi is a single transient suppression device with a breakdown voltage of 25V. It features a max reverse current of 2uA and operates in temperatures ranging from -55°C to 125°C. Ideal for applications requiring protection against voltage transients, it complies with the IEC-61000-4-2 standard.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,050 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

-

10k+ parts

-

3,050

$0.118

-

-

-

Rochester

USA . 300,638 parts In-Stock

1+ parts

-

100+ parts

$0.235

1k+ parts

$0.195

10k+ parts

$0.174

300,638

-

$0.235

$0.195

$0.174

Farnell

UK . 300,638 parts In-Stock

1+ parts

-

100+ parts

$0.508

1k+ parts

$0.423

10k+ parts

-

300,638

-

$0.508

$0.423

-

Verical

USA . 298,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.217

298,464

-

-

-

$0.217

DigiKey

USA . 6,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.110

6,982

-

-

-

$0.110

Flip Electronics (Authorized)

USA . 6,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,982

-

-

-

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Chip1Stop

Japan . 3,050 parts In-Stock

1+ parts

-

100+ parts

$0.153

1k+ parts

$0.137

10k+ parts

$0.133

3,050

-

$0.153

$0.137

$0.133

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,597 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

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1,597

$0.153

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Digiode

USA . 677 parts In-Stock

1+ parts

$0.170

100+ parts

-

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677

$0.170

-

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-

Chip Stock

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

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50,000

-

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Flip Electronics

USA . 6,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,982

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 88,456 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

88,456

$0.130

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Corohmni

South Africa . 384 parts In-Stock

1+ parts

$0.153

100+ parts

-

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384

$0.153

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Corphita

USA . 1,375 parts In-Stock

1+ parts

$0.161

100+ parts

-

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10k+ parts

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1,375

$0.161

-

-

-

Continental Prestige Electronics

USA . 298,464 parts In-Stock

1+ parts

$0.466

100+ parts

$0.395

1k+ parts

-

10k+ parts

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298,464

$0.466

$0.395

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-

Perfect Parts

USA . 9,666 parts In-Stock

1+ parts

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9,666

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TANS Electronics

Latvia . 6,686 parts In-Stock

1+ parts

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6,686

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-

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Kulean Microsystems

USA . 4,699 parts In-Stock

1+ parts

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4,699

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Problanco Electronics

Mexico . 2,799 parts In-Stock

1+ parts

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2,799

-

-

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GreenTree Electronics

Israel . 2,780 parts In-Stock

1+ parts

-

100+ parts

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2,780

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-

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UHIMA Technologies

Türkiye . 302 parts In-Stock

1+ parts

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302

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SupplyDigital Components

Austria . 218 parts In-Stock

1+ parts

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218

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Overview

Enhance the protection of your electronic devices with the NSPU5221MUTBG by Onsemi, a top-quality Transient Suppression Device designed to safeguard against voltage spikes and surges. Manufactured by Onsemi, a trusted industry leader known for their cutting-edge technology and reliability, this product offers unmatched value and peace of mind. Perfect for a wide range of applications, this single-config device is easy to install with its surface mount capability. Trust in the quality and performance of Onsemi's NSPU5221MUTBG to keep your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the device, making it suitable for various environmental conditions.

Nominal Breakdown Voltage: 25 V

The high nominal breakdown voltage ensures effective suppression of transient voltage spikes to protect connected devices.

Maximum Reverse Current: 2 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the device.

Minimum Operating Temperature: -55 °C

Wide range of operating temperature allows the device to function reliably in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good conductivity and solderability for easy installation and maintenance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures reliable and fast response to transient voltage spikes.

Technology: AVALANCHE

Avalanche technology enables the device to handle high energy transient events without degradation or failure.

Maximum Clamping Voltage: 35 V

High maximum clamping voltage ensures effective protection of connected devices by limiting the voltage level during transient events.

Reference Standard: IEC-61000-4-2

Conformance to IEC standards ensures that the product meets international quality and performance requirements.

Diode Element Material: SILICON

The use of silicon material for the diode element provides high efficiency and reliability in suppressing transient voltage spikes.

Technical Specifications

Transient Suppression Devices NSPU5221MUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

26 V

Minimum Breakdown Voltage:

24 V

Nominal Breakdown Voltage:

25 V

Case Connection:

ANODE

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

22 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

22 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPU5221MUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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