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NSPU2101MUT5G

Onsemi

NSPU2101MUT5G by Onsemi

NSPU2101MUT5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 12V breakdown voltage, 0.1uA reverse current, and 18.1V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes. Operates b/w -65°C to 150°C, complies with IEC-61000-4-2, 4-5 standards.

Median Price

$0.485

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,568 parts In-Stock

1+ parts

$0.470

100+ parts

$0.133

1k+ parts

$0.098

10k+ parts

$0.078

10,568

$0.470

$0.133

$0.098

$0.078

DigiKey

USA . 8,367 parts In-Stock

1+ parts

$0.500

100+ parts

$0.194

1k+ parts

$0.129

10k+ parts

$0.116

8,367

$0.500

$0.194

$0.129

$0.116

Flip Electronics (Authorized)

USA . 7,931 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,931

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,398 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

-

2,398

$0.314

-

-

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Vyrian

USA . 538 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

-

538

$0.330

-

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-

Chip Stock

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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54,000

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Flip Electronics

USA . 7,931 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,931

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,082 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

10k+ parts

-

1,082

$0.297

-

-

-

Corohmni

South Africa . 226 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

-

226

$0.330

-

-

-

Component Stockers USA

USA . 6,303 parts In-Stock

1+ parts

$0.430

100+ parts

$0.150

1k+ parts

$0.100

10k+ parts

-

6,303

$0.430

$0.150

$0.100

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SupplyDigital Components

Austria . 8,080 parts In-Stock

1+ parts

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100+ parts

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8,080

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TANS Electronics

Latvia . 6,446 parts In-Stock

1+ parts

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100+ parts

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6,446

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Kulean Microsystems

USA . 5,284 parts In-Stock

1+ parts

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100+ parts

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5,284

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Problanco Electronics

Mexico . 4,949 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,949

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UHIMA Technologies

Türkiye . 45 parts In-Stock

1+ parts

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45

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Overview

Enhance the protection of your electronic devices with the NSPU2101MUT5G transient suppression device by Onsemi. This high-quality product boasts superior reliability and performance, making it ideal for a wide range of applications. Protect your valuable equipment from voltage spikes and surges with ease, thanks to its advanced technology and design. Trust Onsemi's expertise in manufacturing to provide you with the best solution for safeguarding your electronics. Choose the NSPU2101MUT5G for peace of mind and uninterrupted operation of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection against external elements, making the device suitable for various environments.

Config: SINGLE

Single configuration simplifies installation and maintenance, reducing complexity in setup.

Surface Mount: YES

Surface mount capability allows for easy and secure attachment to PCBs, saving space and reducing assembly time.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12 V ensures effective protection against voltage surges and spikes within the specified range.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current of 0.1 uA indicates efficient suppression of reverse currents, safeguarding connected components.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs and provides a compact form factor.

Reverse Test Voltage: 10 V

Reverse test voltage of 10 V ensures reliable performance under reverse voltage conditions, maintaining circuit integrity.

No. of Terminals: 2

Having only two terminals simplifies installation and reduces the chances of wiring errors, improving overall reliability.

Package Style (Meter): CHIP CARRIER

Chip carrier package style enables the device to handle high power densities effectively, ensuring long-term performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows the device to withstand elevated temperature environments without compromising functionality.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature of -65°C ensures reliable operation even in cold conditions, making it suitable for a wide range of applications.

Terminal Finish: NICKEL GOLD PALLADIUM

Nickel gold palladium terminal finish offers excellent conductivity and corrosion resistance, enhancing the device's overall performance and longevity.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and ensures easy connections, making installation faster and more efficient.

Minimum Breakdown Voltage: 11.4 V

Minimum breakdown voltage of 11.4 V provides a safety margin against surges and spikes, protecting connected components effectively.

Maximum Time At Peak Reflow Temperature (s): 30

Maximum time at peak reflow temperature of 30 seconds ensures proper soldering and prevents overheating during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C enables reliable soldering and ensures the device's long-term stability under thermal stress.

Maximum Breakdown Voltage: 12.6 V

Maximum breakdown voltage of 12.6 V provides a safety buffer against voltage spikes, enhancing the device's protective capabilities.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with IEC standards ensures that the device meets international safety and performance requirements, guaranteeing reliable operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type offers fast response times and low clamping voltages, providing effective protection against transient events.

Technology: AVALANCHE

Avalanche technology allows for high energy handling capacity and quick response times, making the device suitable for demanding applications.

Terminal Form: NO LEAD

No lead terminal form simplifies PCB assembly and reduces the risk of lead-related issues, ensuring a reliable electrical connection.

Maximum Repetitive Peak Reverse Voltage: 10 V

Maximum repetitive peak reverse voltage of 10 V provides reliable protection against reverse voltage events, safeguarding connected components.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device only conducts in one direction, offering precise and effective transient voltage suppression.

Maximum Clamping Voltage: 18.1 V

Maximum clamping voltage of 18.1 V limits the voltage levels across connected components during transient events, preventing damage or malfunction.

Diode Element Material: SILICON

Silicon diode element material provides high reliability and stability under various conditions, ensuring long-term performance of the device.

Technical Specifications

Transient Suppression Devices NSPU2101MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

18.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

10 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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