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NSPU3061N2T5G

Onsemi

NSPU3061N2T5G by Onsemi

NSPU3061N2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6.9V breakdown voltage, 1uA reverse current, and 110pF diode capacitance. It is used for transient suppression in electronics to protect against voltage spikes and surges.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,500 parts In-Stock

1+ parts

$0.052

100+ parts

-

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5,500

$0.052

-

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DigiKey

USA . 21,513 parts In-Stock

1+ parts

$0.420

100+ parts

$0.161

1k+ parts

$0.106

10k+ parts

$0.095

21,513

$0.420

$0.161

$0.106

$0.095

Rochester

USA . 881,760 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.059

10k+ parts

$0.053

881,760

-

$0.072

$0.059

$0.053

Verical

USA . 872,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.066

872,000

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-

$0.066

Flip Electronics (Authorized)

USA . 48,000 parts In-Stock

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-

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48,000

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Chip1Stop

Japan . 3,735 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.060

10k+ parts

$0.057

3,735

-

$0.072

$0.060

$0.057

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 349 parts In-Stock

1+ parts

$0.056

100+ parts

-

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349

$0.056

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Vyrian

USA . 247 parts In-Stock

1+ parts

$0.059

100+ parts

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247

$0.059

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Flip Electronics

USA . 56,000 parts In-Stock

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56,000

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Chip Stock

USA . 54,000 parts In-Stock

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54,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,072 parts In-Stock

1+ parts

$0.053

100+ parts

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2,072

$0.053

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Corohmni

South Africa . 458 parts In-Stock

1+ parts

$0.059

100+ parts

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458

$0.059

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Component Stockers USA

USA . 1,402,447 parts In-Stock

1+ parts

$0.060

100+ parts

$0.060

1k+ parts

$0.050

10k+ parts

$0.050

1,402,447

$0.060

$0.060

$0.050

$0.050

Kulean Microsystems

USA . 7,502 parts In-Stock

1+ parts

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7,502

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SupplyDigital Components

Austria . 3,998 parts In-Stock

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3,998

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TANS Electronics

Latvia . 3,653 parts In-Stock

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3,653

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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UHIMA Technologies

Türkiye . 736 parts In-Stock

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736

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Problanco Electronics

Mexico . 322 parts In-Stock

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322

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Overview

Looking for reliable transient suppression devices? Look no further than the NSPU3061N2T5G by Onsemi. With a reputation for quality and innovation, Onsemi delivers top-notch products that are trusted by professionals worldwide. Ideal for a variety of applications, this single-configured device offers exceptional value and benefits to customers. From protecting sensitive electronics to ensuring smooth operation, the NSPU3061N2T5G is a must-have component for your next project. Trust Onsemi to provide the quality and performance you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation and protection for the internal components of the device.

Nominal Breakdown Voltage: 6.9 V

Provides effective suppression of transient voltage spikes within the specified range.

Maximum Reverse Current: 1 uA

Ensures low leakage current, which is important for efficient operation and energy conservation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing the reliability and longevity of the device.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with international standards ensures reliability and compatibility with various systems.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, providing effective protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices NSPU3061N2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

9.5 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.9 V

Maximum Clamping Voltage:

9.7 V

Config:

SINGLE

Minimum Diode Capacitance:

110 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

6.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

6.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSPU3061N2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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