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NSPU3062N2T5G

Onsemi

NSPU3062N2T5G by Onsemi

NSPU3062N2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6.9V breakdown voltage, 1uA reverse current, and 8.7V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes according to IEC-61000-4-2, 4-5 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,548 parts In-Stock

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1,548

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Vyrian

USA . 756 parts In-Stock

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756

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,959 parts In-Stock

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7,959

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Kulean Microsystems

USA . 6,678 parts In-Stock

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6,678

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Problanco Electronics

Mexico . 3,951 parts In-Stock

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TANS Electronics

Latvia . 990 parts In-Stock

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990

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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794

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Corohmni

South Africa . 230 parts In-Stock

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230

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Corphita

USA . 194 parts In-Stock

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Overview

Enhance your electronic devices with the NSPU3062N2T5G by Onsemi, a cutting-edge Transient Suppression Device that guarantees superior quality and reliability. Manufactured by Onsemi, a renowned industry leader, this product ensures top-notch performance and protection against voltage spikes. Ideal for a wide range of applications, this chip carrier style device offers unparalleled benefits including minimal reverse current, high breakdown voltage, and efficient surface mount installation. Upgrade your equipment today with the NSPU3062N2T5G for enhanced durability and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring a long lifespan.

Nominal Breakdown Voltage: 6.9 V

The higher breakdown voltage helps in protecting connected devices from voltage spikes or surges.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss during normal operation.

Maximum Operating Temperature: 150 °C

The device can withstand high temperatures, making it suitable for a wide range of environments.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with industry standards ensures reliability and compatibility with various systems.

Technical Specifications

Transient Suppression Devices NSPU3062N2T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

9.5 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.9 V

Maximum Clamping Voltage:

8.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

6.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

6.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSPU3062N2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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