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ESD5111PFCT5G

Onsemi

ESD5111PFCT5G by Onsemi

ESD5111PFCT5G by Onsemi is a single bidirectional avalanche diode with 5V breakdown voltage. It has a max clamping voltage of 6.5V and operates b/w -55 to 125 °C. Ideal for transient suppression in electronic circuits, meeting IEC-61000-4-2 standards.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 116 parts In-Stock

1+ parts

$0.050

100+ parts

$0.031

1k+ parts

$0.031

10k+ parts

$0.031

116

$0.050

$0.031

$0.031

$0.031

DigiKey

USA . 12,300 parts In-Stock

1+ parts

$0.270

100+ parts

$0.103

1k+ parts

$0.067

10k+ parts

$0.051

12,300

$0.270

$0.103

$0.067

$0.051

Rochester

USA . 4,989,385 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

$0.034

10k+ parts

$0.030

4,989,385

-

$0.041

$0.034

$0.030

Chip1Stop

Japan . 161 parts In-Stock

1+ parts

-

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$0.043

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161

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$0.043

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Distributors (In-Stock)

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Digiode

USA . 878 parts In-Stock

1+ parts

$0.048

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878

$0.048

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Chip Stock

USA . 74,000 parts In-Stock

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74,000

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Cyclops Electronics Ltd

UK . 30,000 parts In-Stock

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30,000

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Flip Electronics

USA . 9,950 parts In-Stock

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9,950

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Vyrian

USA . 716 parts In-Stock

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716

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SPM Sales

USA . 603 parts In-Stock

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603

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Distributors (Availability)

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Corohmni

South Africa . 335 parts In-Stock

1+ parts

$0.043

100+ parts

-

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335

$0.043

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Corphita

USA . 2,453 parts In-Stock

1+ parts

$0.045

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2,453

$0.045

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.059

100+ parts

$0.054

1k+ parts

$0.048

10k+ parts

-

70

$0.059

$0.054

$0.048

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Component Stockers USA

USA . 5,080,900 parts In-Stock

1+ parts

$0.190

100+ parts

$0.100

1k+ parts

$0.540

10k+ parts

$0.540

5,080,900

$0.190

$0.100

$0.540

$0.540

AZTECH Wire

Italy . 716 parts In-Stock

1+ parts

$17.460

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716

$17.460

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Native Components

USA . 493 parts In-Stock

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$43.795

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$42.043

493

$43.795

-

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$42.043

Northwest PG Solutions

USA . 863 parts In-Stock

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$48.174

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863

$48.174

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Perfect Parts

USA . 638,154 parts In-Stock

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Kepictronics

USA . 478,000 parts In-Stock

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478,000

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RC Electronics

USA . 20,000 parts In-Stock

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iodParts Technologies Inc.

India . 9,895 parts In-Stock

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9,895

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TANS Electronics

Latvia . 6,929 parts In-Stock

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6,929

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Problanco Electronics

Mexico . 4,642 parts In-Stock

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Kulean Microsystems

USA . 3,948 parts In-Stock

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SupplyDigital Components

Austria . 3,398 parts In-Stock

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3,398

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the ESD5111PFCT5G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi ensures top-notch quality and performance. This single-configured chip carrier is designed to protect against voltage spikes, making it ideal for a wide range of applications. With a nominal breakdown voltage of 5V and maximum clamping voltage of 6.5V, this device provides superior protection while maintaining optimal functionality. Invest in the ESD5111PFCT5G for peace of mind and safeguard your valuable electronics from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the device, making it suitable for various environmental conditions.

Nominal Breakdown Voltage: 5 V

The nominal breakdown voltage of 5 V ensures effective suppression of transient voltages up to that level, safeguarding connected equipment from potential damage.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current ensures minimal power loss and high efficiency during operation.

Maximum Clamping Voltage: 6.5 V

The maximum clamping voltage of 6.5 V indicates the device's ability to limit the voltage spikes to a safe level, protecting downstream components.

Technology: AVALANCHE

The avalanche technology used in the device allows for quick response to transient voltage surges, effectively diverting excess energy away from sensitive circuits.

Reference Standard: IEC-61000-4-2

Compliance with the IEC standard ensures that the device meets international guidelines for transient suppression, providing reliability and quality assurance.

Technical Specifications

Transient Suppression Devices ESD5111PFCT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

6.5 V

Minimum Breakdown Voltage:

3.68 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

6.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD5111PFCT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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