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ESD5111FCT5G

Onsemi

ESD5111FCT5G by Onsemi

ESD5111FCT5G by Onsemi is a single bidirectional avalanche diode with 5V breakdown voltage, 0.1uA reverse current, and 6.5V clamping voltage. It is used for transient suppression in applications requiring protection against ESD events, meeting IEC-61000-4-2 standards.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 66 parts In-Stock

1+ parts

$0.063

100+ parts

$0.061

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66

$0.063

$0.061

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Rochester

USA . 5,909,313 parts In-Stock

1+ parts

-

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$0.045

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$0.037

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$0.033

5,909,313

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$0.045

$0.037

$0.033

DigiKey

USA . 5,909,313 parts In-Stock

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$0.060

5,909,313

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$0.060

Verical

USA . 3,210,000 parts In-Stock

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$0.042

3,210,000

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$0.042

Farnell

UK . 2,358 parts In-Stock

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$0.057

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2,358

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$0.057

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Element14

Singapore . 2,333 parts In-Stock

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2,333

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Chip1Stop

Japan . 66 parts In-Stock

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$0.058

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66

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$0.058

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Distributors (In-Stock)

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Digiode

USA . 1,712 parts In-Stock

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$0.042

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$0.042

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Nova Conductors

Japan . 74 parts In-Stock

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$0.142

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74

$0.142

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Vyrian

USA . 2,973,209 parts In-Stock

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Chip Stock

USA . 77,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,972,844 parts In-Stock

1+ parts

$0.037

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2,972,844

$0.037

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Semicontronic

India . 2,972,793 parts In-Stock

1+ parts

$0.037

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$0.036

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$0.036

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2,972,793

$0.037

$0.036

$0.036

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Corphita

USA . 1,725 parts In-Stock

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$0.040

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1,725

$0.040

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Corohmni

South Africa . 446 parts In-Stock

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$0.044

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446

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Argo Parts USA

USA . 658 parts In-Stock

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$0.061

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$0.059

658

$0.061

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$0.059

Aranea Global

USA . 1,000 parts In-Stock

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$0.139

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$0.134

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$0.139

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$0.134

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Kepictronics

USA . 80,000 parts In-Stock

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Lixinc

USA . 8,297 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,692 parts In-Stock

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4,692

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TANS Electronics

Latvia . 3,398 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,128 parts In-Stock

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Problanco Electronics

Mexico . 2,875 parts In-Stock

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Kulean Microsystems

USA . 2,837 parts In-Stock

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Continental Prestige Electronics

USA . 2,333 parts In-Stock

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$0.045

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SupplyDigital Components

Austria . 1,537 parts In-Stock

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UHIMA Technologies

Türkiye . 846 parts In-Stock

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Overview

Enhance your electronic devices with the reliable ESD5111FCT5G by Onsemi, a top-tier manufacturer known for producing high-quality transient suppression devices. These single-config surface mount diodes offer exceptional protection against voltage spikes, making them ideal for a wide range of applications. Experience peace of mind knowing your equipment is safeguarded against potential damage, thanks to the superior performance and durability of this product. Upgrade your electronics today with the trusted quality and value that Onsemi provides.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy installation and simple usage.

Surface Mount: YES

Surface mount capability makes it suitable for compact and space-constrained applications.

Nominal Breakdown Voltage: 5 V

Suitable for protecting devices with a nominal voltage of 5 volts from voltage spikes.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular package shape enables easy integration into circuit designs.

Reverse Test Voltage: 3.3 V

Can withstand a reverse test voltage of 3.3 volts, offering reliable protection.

No. of Terminals: 2

Simple two-terminal design for straightforward connectivity.

Package Style (Meter): CHIP CARRIER

Chip carrier package style for efficient heat dissipation and durability.

Maximum Operating Temperature: 125 °C

Operates effectively in a wide range of temperatures up to 125°C.

Minimum Operating Temperature: -55 °C

Can withstand cold temperatures down to -55°C, ensuring reliability in various environments.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and enhances solderability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier installation and mounting on circuit boards.

Minimum Breakdown Voltage: 3.68 V

Provides protection by breaking down at a minimum voltage of 3.68 volts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures up to 260°C during assembly.

Maximum Breakdown Voltage: 6.5 V

Offers protection by breaking down at a maximum voltage of 6.5 volts.

Reference Standard: IEC-61000-4-2

Meets the international reference standard for transient suppression devices, ensuring quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes a trans voltage suppressor diode for effective transient voltage suppression.

Technology: AVALANCHE

Avalanche technology provides robust and reliable protection against transient voltage spikes.

Terminal Form: NO LEAD

No lead terminal form for environmental friendliness and compliance with RoHS directives.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

Capable of handling repetitive peak reverse voltages of 3.3 volts without degradation.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against voltage spikes in both directions.

Maximum Clamping Voltage: 6.5 V

Clamps voltage spikes at a maximum of 6.5 volts to protect downstream components.

Diode Element Material: SILICON

Utilizes silicon diode element material known for its reliability and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD5111FCT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

6.5 V

Minimum Breakdown Voltage:

3.68 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

6.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD5111FCT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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