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ESD5Z2.5T1G

Onsemi

ESD5Z2.5T1G by Onsemi

ESD5Z2.5T1G by Onsemi is a single transient suppression device with 120W peak power dissipation, ideal for protecting sensitive electronics from voltage spikes. With a breakdown voltage of 4V and clamping voltage of 6.5V, it operates in temperatures ranging from -55 to 150°C. This avalanche diode in small outline package is UL recognized for various applications requiring unidirectional protection against ESD events.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,967 parts In-Stock

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$0.042

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DigiKey

USA . 2,930 parts In-Stock

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$0.210

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$0.078

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Mouser Electronics

USA . 1,813 parts In-Stock

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Newark

USA . 1,971 parts In-Stock

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$0.089

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$0.052

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$0.049

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Future Electronics

Canada . 189,000 parts In-Stock

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Flip Electronics (Authorized)

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Verical

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Master Electronics

USA . 30,000 parts In-Stock

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Farnell

UK . 12,649 parts In-Stock

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Element14

Singapore . 12,649 parts In-Stock

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Chip1Stop

Japan . 200 parts In-Stock

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Digiode

USA . 1,240 parts In-Stock

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Nova Conductors

Japan . 62 parts In-Stock

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NAC Semi

USA . 621,000 parts In-Stock

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IBS Electronics

USA . 495,000 parts In-Stock

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Chip Stock

USA . 121,281 parts In-Stock

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Flip Electronics

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Vyrian

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Prism Electronics

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Cyclops Electronics Ltd

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Inventory MP

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Bristol Electronics

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North Shore Components

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Distributors (Availability)

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Component Stockers USA

USA . 217,901 parts In-Stock

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Ampacity Inc.

Singapore . 28,416 parts In-Stock

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Semicontronic

India . 13,085 parts In-Stock

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Corphita

USA . 94 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Argo Parts USA

USA . 4,844 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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Continental Prestige Electronics

USA . 18,660 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,608 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Perfect Parts

USA . 670,387 parts In-Stock

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GreenTree Electronics

Israel . 246,000 parts In-Stock

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Eastek

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Kulean Microsystems

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Problanco Electronics

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Lixinc

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Glotronic Ltd.

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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UHIMA Technologies

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Overview

Unlock the power of protection with the ESD5Z2.5T1G by Onsemi. As a leader in transient suppression devices, Onsemi ensures top-notch quality and reliability in every product. Ideal for a wide range of applications, this diode offers unmatched value and benefits to customers. Safeguard your electronics with ease and peace of mind, thanks to the advanced technology and high-performance capabilities of the ESD5Z2.5T1G. Trust Onsemi for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components of the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 120 W

With a high peak reverse power dissipation of 120 W, this device can handle transient voltage spikes effectively, protecting connected components from damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that this transient suppression device can function reliably in a wide range of environmental conditions.

Minimum Breakdown Voltage: 4 V

The low minimum breakdown voltage of 4 V allows this device to quickly respond to transient voltage spikes and divert excess energy away from sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient and effective transient voltage suppression, protecting connected devices from voltage surges.

Technical Specifications

Transient Suppression Devices ESD5Z2.5T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

4 V

Maximum Clamping Voltage:

6.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

120 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

2.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD5Z2.5T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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