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ESD5Z3.3T1

Onsemi

ESD5Z3.3T1 by Onsemi

ESD5Z3.3T1 by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 3.3V max repetitive peak reverse voltage and 8.4V clamping voltage. It has a max non-repetitive peak reverse power dissipation of 158W, making it ideal for transient suppression in electronic circuits requiring protection against voltage spikes. The device comes in a small outline package style suitable for surface mount applications.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 2,000 parts In-Stock

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$0.120

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2,000

$0.120

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Chip Stock

USA . 67,640 parts In-Stock

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67,640

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Bristol Electronics

USA . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 1,179 parts In-Stock

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1,179

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Digiode

USA . 925 parts In-Stock

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925

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,786 parts In-Stock

1+ parts

$0.030

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3,786

$0.030

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Corohmni

South Africa . 260 parts In-Stock

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$0.120

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260

$0.120

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Semicontronic

India . 404 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

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$0.980

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404

$1.010

$0.985

$0.980

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AZTECH Wire

Italy . 192 parts In-Stock

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$6.103

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192

$6.103

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Problanco Electronics

Mexico . 7,664 parts In-Stock

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Kulean Microsystems

USA . 7,632 parts In-Stock

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7,632

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Continental Prestige Electronics

USA . 6,554 parts In-Stock

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6,554

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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SupplyDigital Components

Austria . 5,077 parts In-Stock

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5,077

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Argo Parts USA

USA . 4,752 parts In-Stock

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4,752

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Bastille Electronics

Australia . 870 parts In-Stock

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870

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UHIMA Technologies

Türkiye . 861 parts In-Stock

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861

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TANS Electronics

Latvia . 583 parts In-Stock

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583

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Corphita

USA . 386 parts In-Stock

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386

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Overview

Enhance the reliability of your electronic devices with the ESD5Z3.3T1 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi ensures top-notch quality and performance. This single-configured, surface-mount diode is ideal for a wide range of applications, offering superior protection against voltage spikes. With a maximum clamping voltage of 8.4V and a minimum breakdown voltage of 5V, this diode provides peace of mind for your sensitive electronics. Upgrade your devices today with the ESD5Z3.3T1 and experience the difference in protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and provides protection against external elements, making this product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 158 W

With a high maximum non repetitive peak reverse power dissipation of 158 W, this product can effectively handle sudden high voltage spikes without getting damaged, ensuring protection for connected devices.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering during the manufacturing process, ensuring secure connections and overall product quality.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this product is specifically designed to effectively suppress voltage transients and protect sensitive electronic components from voltage spikes, making it an ideal choice for transient suppression applications.

Technology: AVALANCHE

Utilizing avalanche technology, this product can handle high transient currents by rapidly responding to voltage spikes and diverting excess energy away from connected devices, offering effective protection against transient voltage events.

Technical Specifications

Transient Suppression Devices ESD5Z3.3T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

5 V

Maximum Clamping Voltage:

8.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

158 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

ESD5Z3.3T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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