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ESD5V3U4RRSH6327XTSA1

Infineon Technologies

ESD5V3U4RRSH6327XTSA1 by Infineon Technologies

ESD5V3U4RRSH6327XTSA1 by Infineon is a single avalanche diode with 6.3V breakdown voltage and 50W peak power dissipation. It is used for transient suppression in electronics, offering unidirectional protection with a max clamping voltage of 15V. Ideal for surface mount applications, it operates b/w -55°C to 125°C temperature range.

Median Price

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8

In-Stock Inventory

1k+

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Semi Source

USA . 8,699 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 1,190 parts In-Stock

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Digiode

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875

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Bristol Electronics

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Atlantic Semiconductor

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Prism Electronics

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Aztec Data Supply Inc.

USA . 2,836 parts In-Stock

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$0.160

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Modulus Dynamics

Lithuania . 21,097 parts In-Stock

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$0.163

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$0.156

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$0.150

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Corohmni

South Africa . 106 parts In-Stock

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Ampacity Inc.

Singapore . 1,582 parts In-Stock

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Semicontronic

India . 626 parts In-Stock

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AZTECH Wire

Italy . 502 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Authorized Procurement Solutions

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Corphita

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Bastille Electronics

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Overview

Enhance the reliability and performance of your electronic devices with the ESD5V3U4RRSH6327XTSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies ensures top-notch quality and innovation in their transient suppression devices. Ideal for protecting sensitive components from voltage spikes and surges, this product offers peace of mind and long-lasting protection for your valuable equipment. Trust in Infineon Technologies to deliver superior products that meet your needs and exceed your expectations. Choose the ESD5V3U4RRSH6327XTSA1 for unmatched quality and reliability in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and heat resistance, making the device suitable for a wide range of operating temperatures.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy PCB integration and saves space in electronic assemblies.

Maximum Non Repetitive Peak Reverse Power Dissipation: 50 W

High power dissipation capability ensures the device can handle transient surges effectively, protecting downstream components.

Nominal Breakdown Voltage: 6.3 V

The nominal breakdown voltage of 6.3 V provides reliable protection against voltage spikes and surges.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and handling during assembly.

No. of Terminals: 6

Having 6 terminals allows for flexible connections in circuit applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact electronic designs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures the device can function reliably in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the device to operate in cold environments without performance degradation.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit configurations and connections.

Minimum Breakdown Voltage: 6.3 V

Having a minimum breakdown voltage of 6.3 V ensures consistent protection against voltage transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode technology is specifically designed for protecting sensitive electronics from voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology provides fast response and high energy handling capabilities for effective transient suppression.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and mounting on the PCB for efficient assembly.

Maximum Repetitive Peak Reverse Voltage: 6 V

High maximum repetitive peak reverse voltage ensures reliable performance and protection over multiple surge events.

Polarity: UNIDIRECTIONAL

Unidirectional polarity allows the device to suppress transient voltages in one direction, ensuring proper protection for sensitive components.

Maximum Clamping Voltage: 15 V

Maximum clamping voltage of 15 V limits the voltage spike level to a safe threshold, protecting downstream circuitry.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, low leakage current, and fast response time for effective transient suppression.

Technical Specifications

Transient Suppression Devices ESD5V3U4RRSH6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

6.3 V

Nominal Breakdown Voltage:

6.3 V

Maximum Clamping Voltage:

15 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

50 W

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

ESD5V3U4RRSH6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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