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ICTE-36RL4G

Onsemi

ICTE-36RL4G by Onsemi

ICTE-36RL4G by Onsemi is a Zener technology Transient Suppression Device with 1500W peak power dissipation and 36V max reverse voltage. It features unidirectional polarity, 65.2V clamping voltage, and is ideal for protecting sensitive electronics from voltage spikes in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 71,000 parts In-Stock

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Vyrian

USA . 7,105 parts In-Stock

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Digiode

USA . 1,621 parts In-Stock

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R&J Components

USA . 1,495 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.047

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$0.043

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$0.039

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450

$0.047

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$0.039

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AZTECH Wire

Italy . 298 parts In-Stock

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$14.440

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Kulean Microsystems

USA . 5,814 parts In-Stock

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Problanco Electronics

Mexico . 5,180 parts In-Stock

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TANS Electronics

Latvia . 4,292 parts In-Stock

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Corphita

USA . 887 parts In-Stock

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SupplyDigital Components

Austria . 452 parts In-Stock

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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Overview

Enhance your electronic devices with the ICTE-36RL4G from Onsemi, a leading manufacturer in the industry. As a transient suppression device, this product offers unparalleled quality and reliability, ensuring optimal performance and protection against voltage spikes. Ideal for a wide range of applications, this single-configured diode provides a maximum clamping voltage of 65.2 V, making it a valuable addition to any circuit. Trust Onsemi to deliver top-notch technology that enhances the efficiency and longevity of your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against harsh environments, making the product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Offers high power dissipation capability, ensuring protection against sudden voltage spikes or surges.

Package Shape: ROUND

Compact and versatile design allows for easy installation in various electronic devices.

Maximum Power Dissipation: 5 W

Efficiently handles power dissipation while maintaining stable performance under load conditions.

Minimum Breakdown Voltage: 42.4 V

Provides reliable breakdown voltage protection, safeguarding connected components from overvoltage situations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring effective protection against voltage spikes and surges.

Technology: ZENER

Utilizes Zener technology for precise voltage regulation and efficient transient voltage suppression.

Maximum Clamping Voltage: 65.2 V

Provides effective clamping of transient voltages, limiting the voltage level across connected devices.

Diode Element Material: SILICON

Utilizes silicon material for the diode element, offering high conductivity and reliability for suppressing transient voltages.

Technical Specifications

Transient Suppression Devices ICTE-36RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

42.4 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

65.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

36 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

ICTE-36RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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