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SZNSP8814MTWTAG

Onsemi

SZNSP8814MTWTAG by Onsemi

SZNSP8814MTWTAG by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max clamping voltage of 15V. It is ideal for protecting electronic circuits from voltage spikes in automotive applications. With a breakdown voltage of 3.5V and reverse current of 0.5uA, it ensures reliable performance in temperatures ranging from -55 °C to 125°C.

Median Price

$0.713

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 57,965 parts In-Stock

1+ parts

-

100+ parts

$0.713

1k+ parts

$0.592

10k+ parts

$0.528

57,965

-

$0.713

$0.592

$0.528

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,468 parts In-Stock

1+ parts

$0.665

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2,468

$0.665

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Vyrian

USA . 11,590 parts In-Stock

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11,590

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Flip Electronics

USA . 3,100 parts In-Stock

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3,100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 841 parts In-Stock

1+ parts

$0.630

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-

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841

$0.630

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Corohmni

South Africa . 67 parts In-Stock

1+ parts

$0.700

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-

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67

$0.700

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AZTECH Wire

Italy . 906 parts In-Stock

1+ parts

$18.590

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906

$18.590

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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SupplyDigital Components

Austria . 4,221 parts In-Stock

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Kulean Microsystems

USA . 3,856 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 972 parts In-Stock

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972

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Problanco Electronics

Mexico . 388 parts In-Stock

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388

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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303

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Overview

Experience the next level of protection with the SZNSP8814MTWTAG by Onsemi. As a leader in transient suppression devices, Onsemi delivers unparalleled quality and reliability. This common anode configuration with four elements provides superior performance in safeguarding your electronics from voltage spikes. With a compact package design and wide temperature range, this device is perfect for various applications. Trust Onsemi to bring you the best-in-class technology for peace of mind and uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and resistance to environmental factors, making the device suitable for various applications.

Nominal Breakdown Voltage: 3.5 V

The nominal breakdown voltage ensures that the device effectively suppresses transient voltage spikes up to 3.5 volts, providing reliable protection for sensitive electronic components.

Maximum Reverse Current: 0.5 uA

With a low maximum reverse current of 0.5uA, the device offers efficient conduction and minimal power dissipation during normal operation.

Maximum Clamping Voltage: 15 V

The maximum clamping voltage of 15 volts ensures that the device limits the voltage spikes to a safe level, protecting downstream components from overvoltage potential damage.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

Compliance with industry standards such as AEC-Q101, IEC, and ISO ensures the reliability and performance of the device in various applications, meeting stringent quality requirements.

Technical Specifications

Transient Suppression Devices SZNSP8814MTWTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5 V

Minimum Breakdown Voltage:

3.2 V

Nominal Breakdown Voltage:

3.5 V

Maximum Clamping Voltage:

15 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNSP8814MTWTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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