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ESDM3032MXT5G

Onsemi

ESDM3032MXT5G by Onsemi

ESDM3032MXT5G by Onsemi is a single bidirectional avalanche diode with 4.9V breakdown voltage, 0.1uA reverse current, and 8.5V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes and surges.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,326 parts In-Stock

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Vyrian

USA . 2,044 parts In-Stock

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Native Components

USA . 995 parts In-Stock

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$0.083

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$0.080

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$0.080

Northwest PG Solutions

USA . 118 parts In-Stock

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$0.091

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$0.080

AZTECH Wire

Italy . 1,073 parts In-Stock

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$20.120

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Kulean Microsystems

USA . 4,869 parts In-Stock

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Problanco Electronics

Mexico . 3,684 parts In-Stock

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SupplyDigital Components

Austria . 3,662 parts In-Stock

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TANS Electronics

Latvia . 1,972 parts In-Stock

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Corphita

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Corohmni

South Africa . 395 parts In-Stock

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Overview

Experience superior protection and reliability with the ESDM3032MXT5G transient suppression device by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and performance in all their products. The ESDM3032MXT5G is perfect for applications requiring high-quality transient suppression devices, offering peace of mind and safeguarding your electronic components from voltage spikes. With its advanced technology and bidirectional polarity, this product provides maximum clamping voltage and minimal reverse current, making it an invaluable asset for any project. Trust Onsemi and elevate your electronics with the ESDM3032MXT5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection, ensuring the device can withstand various environmental conditions.

Config: SINGLE

The single configuration simplifies installation and operation of the transient suppression device, making it easier for users to integrate into their systems.

Surface Mount: YES

The surface mount capability allows for easier and more efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Breakdown Voltage: 4.9 V

The 4.9 V nominal breakdown voltage provides effective protection against voltage spikes and surges, safeguarding connected equipment from potential damage.

Maximum Reverse Current: 0.1 uA

With a low maximum reverse current of 0.1 uA, the device ensures minimal leakage and improved efficiency in suppressing transient events.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration and placement within electronic systems, optimizing space utilization and design flexibility.

Reverse Test Voltage: 3.3 V

The 3.3 V reverse test voltage capability indicates the device's ability to protect against reverse polarity conditions, enhancing overall system reliability.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures proper installation, reducing the risk of errors and improving overall device performance.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers compactness and efficient heat dissipation, enhancing the device's thermal management and overall reliability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the device can withstand elevated temperatures, ensuring reliable performance in demanding environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C enables the device to function effectively in cold environments, increasing its versatility and usability.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and ensures secure electrical connections, improving overall device stability and performance.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, the device can effectively handle transient events without overheating, ensuring long-term reliability.

Minimum Breakdown Voltage: 4.1 V

The 4.1 V minimum breakdown voltage ensures reliable protection against voltage surges, enhancing the device's ability to safeguard sensitive components.

Maximum Breakdown Voltage: 5.7 V

The 5.7 V maximum breakdown voltage provides a high level of protection against voltage spikes, making the device suitable for a wide range of applications.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with IEC standards ensures that the device meets industry requirements for transient suppression, guaranteeing reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes enhances the device's ability to clamp transient voltages effectively, offering reliable protection for connected equipment.

Technology: AVALANCHE

Utilizing avalanche technology improves the device's ability to handle high-energy transients, ensuring robust protection for sensitive electronics and systems.

Terminal Form: NO LEAD

The no-lead terminal form simplifies installation and improves mechanical strength, enhancing the overall durability and reliability of the device.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

The 3.3 V maximum repetitive peak reverse voltage capability ensures consistent and reliable performance in suppressing transient events, maintaining system integrity.

Polarity: BIDIRECTIONAL

The bidirectional polarity feature allows the device to provide protection against voltage surges in both directions, offering comprehensive transient suppression for various applications.

Maximum Clamping Voltage: 8.5 V

With a maximum clamping voltage of 8.5 V, the device limits transient voltage levels effectively, preventing damage to connected equipment and ensuring system reliability.

Diode Element Material: SILICON

The use of silicon diode element material provides high-performance transient suppression capabilities, offering reliable protection and long-term durability for electronic systems.

Technical Specifications

Transient Suppression Devices ESDM3032MXT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

5.7 V

Minimum Breakdown Voltage:

4.1 V

Nominal Breakdown Voltage:

4.9 V

Maximum Clamping Voltage:

8.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDM3032MXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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