Loading...

ESDM1051

Onsemi

ESDM1051 by Onsemi

ESDM1051 by Onsemi is a single bidirectional Trans Voltage Suppressor Diode with 6.8V breakdown voltage and 0.1uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes, meeting IEC-61000-4-2 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,262

-

-

-

-

Vyrian

USA . 723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

723

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 176 parts In-Stock

1+ parts

$1.533

100+ parts

-

1k+ parts

-

10k+ parts

-

176

$1.533

-

-

-

Northwest PG Solutions

USA . 347 parts In-Stock

1+ parts

$1.686

100+ parts

-

1k+ parts

-

10k+ parts

-

347

$1.686

-

-

-

SupplyDigital Components

Austria . 7,011 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,011

-

-

-

-

Problanco Electronics

Mexico . 5,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,127

-

-

-

-

TANS Electronics

Latvia . 4,436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,436

-

-

-

-

Kulean Microsystems

USA . 2,278 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,278

-

-

-

-

Corphita

USA . 1,833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,833

-

-

-

-

UHIMA Technologies

Türkiye . 464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

464

-

-

-

-

Corohmni

South Africa . 322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

322

-

-

-

-

Overview

Discover the power of protection with the ESDM1051 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality transient suppression devices that offer unparalleled reliability and performance. Ideal for a wide range of applications, this single-configured device provides peace of mind against voltage surges, ensuring the safety and longevity of your electronics. With a maximum clamping voltage of 10V and bidirectional polarity, the ESDM1051 is the ultimate solution for safeguarding your valuable equipment. Trust Onsemi to deliver exceptional value and superior protection with the ESDM1051.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability, making this product suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance of the transient suppression device.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and improving overall efficiency.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage of 6.8 V ensures effective protection against voltage spikes and transient surges.

Maximum Reverse Current: 0.1 uA

With a low maximum reverse current of 0.1 uA, this product minimizes leakage and ensures efficient operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting within electronic devices.

Reverse Test Voltage: 5.5 V

The reverse test voltage of 5.5 V indicates the level at which the device can withstand reverse polarity, enhancing its reliability.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and adds to the overall ease of use of the transient suppression device.

Package Style (Meter): CHIP CARRIER

The chip carrier package style ensures compactness and efficient heat dissipation, making it ideal for small electronic devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures the device can function effectively even in extreme cold conditions.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and allows for secure connections within a circuit.

Reference Standard: IEC-61000-4-2

Compliance with the IEC-61000-4-2 standard ensures the product meets industry regulations and performance benchmarks.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of voltage spikes and transient surges, protecting sensitive electronic components.

Technology: AVALANCHE

The avalanche technology provides high-energy handling capabilities, ensuring effective protection against sudden voltage spikes.

Terminal Form: NO LEAD

The no lead terminal form simplifies installation and eliminates the risk of lead-related issues, improving overall safety.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

The maximum repetitive peak reverse voltage of 5.5 V indicates the device's ability to withstand repeated voltage surges without failure.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, enhancing overall protection capabilities.

Maximum Clamping Voltage: 10 V

With a maximum clamping voltage of 10 V, this product effectively limits transient voltage spikes to a safe level, protecting connected equipment.

Diode Element Material: SILICON

The use of silicon diode element material ensures high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESDM1051 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDM1051 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 16