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ESDM1051MX4T5G

Onsemi

ESDM1051MX4T5G by Onsemi

ESDM1051MX4T5G by Onsemi is a unidirectional avalanche diode with 6.8V breakdown voltage and 0.1uA reverse current, suitable for transient suppression applications. It comes in a chip carrier package with bottom terminals, operating b/w -55 to 125 °C, meeting IEC-61000-4-2 standards.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 80,000 parts In-Stock

1+ parts

$0.068

100+ parts

$0.029

1k+ parts

-

10k+ parts

-

80,000

$0.068

$0.029

-

-

DigiKey

USA . 9,870 parts In-Stock

1+ parts

$0.160

100+ parts

$0.064

1k+ parts

$0.044

10k+ parts

$0.035

9,870

$0.160

$0.064

$0.044

$0.035

Mouser Electronics

USA . 9,240 parts In-Stock

1+ parts

$0.160

100+ parts

$0.064

1k+ parts

$0.044

10k+ parts

$0.035

9,240

$0.160

$0.064

$0.044

$0.035

Flip Electronics (Authorized)

USA . 239,077 parts In-Stock

1+ parts

-

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239,077

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Verical

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.029

10k+ parts

-

80,000

-

-

$0.029

-

Chip1Stop

Japan . 70,000 parts In-Stock

1+ parts

-

100+ parts

$0.068

1k+ parts

$0.051

10k+ parts

$0.038

70,000

-

$0.068

$0.051

$0.038

Rochester

USA . 8,304 parts In-Stock

1+ parts

-

100+ parts

$0.042

1k+ parts

$0.035

10k+ parts

$0.031

8,304

-

$0.042

$0.035

$0.031

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,150 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

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10k+ parts

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2,150

$0.033

-

-

-

Vyrian

USA . 612 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

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612

$0.035

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Flip Electronics

USA . 399,077 parts In-Stock

1+ parts

-

100+ parts

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399,077

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,247 parts In-Stock

1+ parts

$0.032

100+ parts

-

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10k+ parts

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2,247

$0.032

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Corohmni

South Africa . 490 parts In-Stock

1+ parts

$0.035

100+ parts

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490

$0.035

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Native Components

USA . 611 parts In-Stock

1+ parts

$1.335

100+ parts

-

1k+ parts

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611

$1.335

-

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Northwest PG Solutions

USA . 1,469 parts In-Stock

1+ parts

$1.469

100+ parts

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1,469

$1.469

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Perfect Parts

USA . 44,408 parts In-Stock

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44,408

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GreenTree Electronics

Israel . 9,875 parts In-Stock

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9,875

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Authorized Procurement Solutions

USA . 9,775 parts In-Stock

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9,775

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SupplyDigital Components

Austria . 6,505 parts In-Stock

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6,505

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Kulean Microsystems

USA . 6,207 parts In-Stock

1+ parts

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6,207

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Problanco Electronics

Mexico . 5,239 parts In-Stock

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5,239

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TANS Electronics

Latvia . 1,808 parts In-Stock

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1,808

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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816

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Overview

Protect your electronic devices with the ESDM1051MX4T5G by Onsemi, a top-quality transient suppression device that offers unmatched reliability and performance. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this product is designed to safeguard your equipment from harmful voltage spikes and surges. Ideal for a variety of applications, this chip carrier package is easy to install and provides bidirectional protection with a maximum clamping voltage of 10V. Ensure the longevity of your electronics with the ESDM1051MX4T5G and experience peace of mind knowing your devices are safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic epoxy material provides durability and protection, making this product suitable for various applications.

Nominal Breakdown Voltage: 6.8 V

The high breakdown voltage ensures effective suppression of transient voltage spikes, protecting sensitive electronic components.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the device to perform reliably in harsh environmental conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transistor voltage suppressor diode design offers fast response time and high clamping capability for effective transient suppression.

Technical Specifications

Transient Suppression Devices ESDM1051MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDM1051MX4T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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