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ESDM3551MXT5G

Onsemi

ESDM3551MXT5G by Onsemi

ESDM3551MXT5G by Onsemi is a single bidirectional avalanche diode with 6.3V breakdown voltage, 0.1uA reverse current, and 8.2V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation. Package style: chip carrier, operating temp: -55 to 150°C.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.262

100+ parts

$0.104

1k+ parts

-

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100

$0.262

$0.104

-

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DigiKey

USA . 5,755,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.060

5,755,996

-

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-

$0.060

Rochester

USA . 5,753,996 parts In-Stock

1+ parts

-

100+ parts

$0.052

1k+ parts

$0.043

10k+ parts

$0.038

5,753,996

-

$0.052

$0.043

$0.038

Verical

USA . 3,960,564 parts In-Stock

1+ parts

-

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$0.048

3,960,564

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$0.048

Flip Electronics (Authorized)

USA . 3,594,750 parts In-Stock

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3,594,750

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Chip1Stop

Japan . 5,515 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.034

10k+ parts

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5,515

-

$0.037

$0.034

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Mouser Electronics

USA . 2,353 parts In-Stock

1+ parts

-

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10k+ parts

$0.049

2,353

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 602 parts In-Stock

1+ parts

$0.037

100+ parts

-

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602

$0.037

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Digiode

USA . 1,619 parts In-Stock

1+ parts

$0.041

100+ parts

-

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1,619

$0.041

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Flip Electronics

USA . 1,249,750 parts In-Stock

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1,249,750

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Pegasus Components GmbH

Germany . 2,498 parts In-Stock

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2,498

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Bristol Electronics

USA . 434 parts In-Stock

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434

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Distributors (Availability)

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Corohmni

South Africa . 248 parts In-Stock

1+ parts

$0.037

100+ parts

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248

$0.037

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Corphita

USA . 2,061 parts In-Stock

1+ parts

$0.039

100+ parts

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2,061

$0.039

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Component Stockers USA

USA . 6,136,471 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

6,136,471

$0.040

$0.040

$0.040

$0.040

Native Components

USA . 47 parts In-Stock

1+ parts

$0.553

100+ parts

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47

$0.553

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Northwest PG Solutions

USA . 1,626 parts In-Stock

1+ parts

$0.609

100+ parts

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1,626

$0.609

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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Lixinc

USA . 10,007 parts In-Stock

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SupplyDigital Components

Austria . 7,381 parts In-Stock

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TANS Electronics

Latvia . 5,163 parts In-Stock

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Kulean Microsystems

USA . 4,051 parts In-Stock

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Problanco Electronics

Mexico . 2,336 parts In-Stock

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2,336

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UHIMA Technologies

Türkiye . 519 parts In-Stock

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519

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Speed Components Ltd (Excess)

Israel . 494 parts In-Stock

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494

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Continental Prestige Electronics

USA . 315 parts In-Stock

1+ parts

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100+ parts

$0.079

1k+ parts

$0.054

10k+ parts

$0.041

315

-

$0.079

$0.054

$0.041

Overview

Enhance the reliability of your electronic devices with the ESDM3551MXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance. This Transient Suppression Device is designed to protect your equipment from voltage spikes, ensuring smooth operation and longevity. With its bidirectional polarity and avalanche technology, you can trust that your devices are safeguarded against damaging electrical surges. Invest in peace of mind and durability with the ESDM3551MXT5G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers durability and protection for the internal components, making this device suitable for a wide range of applications.

Nominal Breakdown Voltage: 6.3 V

The high nominal breakdown voltage of 6.3 V ensures efficient suppression of transient voltage spikes, protecting sensitive electronic components in the circuit.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1 uA indicates minimal leakage current, which is essential for maintaining the integrity of the circuit during normal operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transient suppression device can withstand high temperature environments, ensuring reliability in demanding conditions.

Reference Standard: IEC-61000-4-2, 4-5; ISO 10605

Compliance with international standards such as IEC and ISO ensures that this device meets strict quality and performance requirements, making it a reliable choice for various applications.

Technical Specifications

Transient Suppression Devices ESDM3551MXT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

7 V

Minimum Breakdown Voltage:

5.6 V

Nominal Breakdown Voltage:

6.3 V

Maximum Clamping Voltage:

8.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2, 4-5; ISO 10605

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDM3551MXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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