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ESDM1031MX4T5G

Onsemi

ESDM1031MX4T5G by Onsemi

ESDM1031MX4T5G by Onsemi is a single bidirectional avalanche diode with 5.2V breakdown voltage, 0.5uA reverse current, and 9.6V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation. Package style: chip carrier, surface mountable, operating temp -55 to 150 °C.

Median Price

$0.038

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 443,950 parts In-Stock

1+ parts

-

100+ parts

$0.038

1k+ parts

$0.031

10k+ parts

$0.028

443,950

-

$0.038

$0.031

$0.028

DigiKey

USA . 443,950 parts In-Stock

1+ parts

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$0.030

443,950

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$0.030

Verical

USA . 263,950 parts In-Stock

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$0.039

263,950

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$0.039

Distributors (In-Stock)

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Digiode

USA . 771 parts In-Stock

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$0.029

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771

$0.029

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Vyrian

USA . 74 parts In-Stock

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$0.030

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74

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Flip Electronics

USA . 70,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 658 parts In-Stock

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$0.028

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658

$0.028

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Component Stockers USA

USA . 1,092,150 parts In-Stock

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$0.030

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$0.030

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$0.030

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$0.030

1,092,150

$0.030

$0.030

$0.030

$0.030

Corohmni

South Africa . 341 parts In-Stock

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$0.030

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341

$0.030

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Northwest PG Solutions

USA . 1,460 parts In-Stock

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$3.195

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1,460

$3.195

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Kulean Microsystems

USA . 6,713 parts In-Stock

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Problanco Electronics

Mexico . 4,611 parts In-Stock

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SupplyDigital Components

Austria . 3,443 parts In-Stock

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3,443

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TANS Electronics

Latvia . 1,241 parts In-Stock

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UHIMA Technologies

Türkiye . 809 parts In-Stock

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Native Components

USA . 370 parts In-Stock

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$2.818

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370

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$2.818

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Overview

Experience superior protection with the ESDM1031MX4T5G from Onsemi. As a leader in transient suppression devices, Onsemi ensures top-notch quality and reliability. This single-config chip carrier offers bidirectional polarity and an avalanche technology for unmatched performance. Ideal for a wide range of applications, this device provides a maximum clamping voltage of 9.6V to safeguard your electronics from damaging voltage spikes. Trust Onsemi to deliver the value, benefits, and advantages you need for ultimate peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring a longer lifespan.

Nominal Breakdown Voltage: 5.2 V

Effectively suppresses transient voltage spikes above this level, protecting connected devices.

Maximum Reverse Current: 0.5 uA

Allows for minimal leakage current, ensuring efficient operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a variety of applications.

Minimum Operating Temperature: -55 °C

Operates effectively even in extremely low temperature conditions.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with industry standards ensures reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type optimized for transient suppression, providing robust protection.

Polarity: BIDIRECTIONAL

Offers protection for voltage spikes in both directions, enhancing overall functionality.

Maximum Clamping Voltage: 9.6 V

Limits the peak voltage to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices ESDM1031MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

6.3 V

Minimum Breakdown Voltage:

4.6 V

Nominal Breakdown Voltage:

5.2 V

Maximum Clamping Voltage:

9.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN COPPER SILVER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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