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ESDM1121MX4T5G

Onsemi

ESDM1121MX4T5G by Onsemi

ESDM1121MX4T5G by Onsemi is a single bidirectional avalanche diode with 14V breakdown voltage, 0.5uA reverse current, and 30V clamping voltage. It is used for transient suppression in applications requiring protection against ESD and surge events as per IEC-61000-4-2, 4-5 standards.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 300,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 300,000 parts In-Stock

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Mouser Electronics

USA . 9,880 parts In-Stock

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$0.034

9,880

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$0.034

Distributors (In-Stock)

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Vyrian

USA . 1,812 parts In-Stock

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$0.034

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Flip Electronics

USA . 300,000 parts In-Stock

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Digiode

USA . 1,911 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 491 parts In-Stock

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$0.034

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491

$0.034

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Component Stockers USA

USA . 7,389 parts In-Stock

1+ parts

$0.270

100+ parts

$0.090

1k+ parts

$0.050

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-

7,389

$0.270

$0.090

$0.050

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Native Components

USA . 502 parts In-Stock

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$1.461

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502

$1.461

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Northwest PG Solutions

USA . 754 parts In-Stock

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$1.607

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754

$1.607

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Kulean Microsystems

USA . 6,446 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,860 parts In-Stock

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2,860

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Problanco Electronics

Mexico . 1,491 parts In-Stock

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UHIMA Technologies

Türkiye . 968 parts In-Stock

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Corphita

USA . 634 parts In-Stock

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TANS Electronics

Latvia . 258 parts In-Stock

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Overview

Discover the ESDM1121MX4T5G by Onsemi, a top-quality transient suppression device designed to protect your electronics from voltage spikes and surges. With a reputation for excellence, Onsemi delivers reliable and innovative solutions for a wide range of applications. This single-configured device offers customers peace of mind with its bidirectional polarity and maximum clamping voltage of 30V. Trust in the technology of this avalanche diode to safeguard your valuable equipment, ensuring optimal performance even in challenging environments. Choose the ESDM1121MX4T5G for superior protection and lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device in various operating conditions.

Nominal Breakdown Voltage: 14 V

Ensures effective suppression of transient voltage spikes up to 14 volts, offering reliable protection for connected components.

Maximum Reverse Current: 0.5 uA

Offers low reverse current flow, which is essential for maintaining the integrity of the circuit and preventing damage to sensitive electronics.

Maximum Operating Temperature: 150 °C

Allows the device to function effectively in higher temperature environments, ensuring reliability in various applications.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with industry standards ensures the device meets quality and safety requirements for reliable transient suppression.

Technical Specifications

Transient Suppression Devices ESDM1121MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Nominal Breakdown Voltage:

14 V

Maximum Clamping Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDM1121MX4T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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