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ESDM2032MX4T5G

Onsemi

ESDM2032MX4T5G by Onsemi

ESDM2032MX4T5G by Onsemi is a single bidirectional avalanche diode with 5.2V breakdown voltage, 0.5uA reverse current, and 8.2V clamping voltage. It is used in transient suppression applications for protecting sensitive electronics from voltage spikes.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,155 parts In-Stock

1+ parts

$0.330

100+ parts

$0.113

1k+ parts

$0.066

10k+ parts

$0.050

8,155

$0.330

$0.113

$0.066

$0.050

Flip Electronics (Authorized)

USA . 80,000 parts In-Stock

1+ parts

-

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80,000

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Distributors (In-Stock)

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Digiode

USA . 1,410 parts In-Stock

1+ parts

$0.180

100+ parts

-

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1,410

$0.180

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Vyrian

USA . 2,240 parts In-Stock

1+ parts

$0.190

100+ parts

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2,240

$0.190

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Flip Electronics

USA . 30,000 parts In-Stock

1+ parts

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30,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,240 parts In-Stock

1+ parts

$0.171

100+ parts

-

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1,240

$0.171

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-

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Corohmni

South Africa . 125 parts In-Stock

1+ parts

$0.190

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125

$0.190

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Native Components

USA . 333 parts In-Stock

1+ parts

$5.255

100+ parts

-

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333

$5.255

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Kulean Microsystems

USA . 6,173 parts In-Stock

1+ parts

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6,173

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SupplyDigital Components

Austria . 5,539 parts In-Stock

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5,539

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Problanco Electronics

Mexico . 5,254 parts In-Stock

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5,254

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TANS Electronics

Latvia . 675 parts In-Stock

1+ parts

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675

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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516

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Northwest PG Solutions

USA . 431 parts In-Stock

1+ parts

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100+ parts

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$5.150

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431

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$5.150

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Formix International (Excess)

India . 110 parts In-Stock

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110

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Overview

Protect your electronic devices with the ESDM2032MX4T5G by Onsemi, a top-quality Transient Suppression Device that guarantees unmatched performance and reliability. Manufactured by industry leader Onsemi, this product offers superior protection against voltage spikes and surges, ensuring the safety and longevity of your valuable equipment. Ideal for a wide range of applications, this single-configured device is easy to install and provides peace of mind knowing your electronics are safeguarded. Invest in the ESDM2032MX4T5G today and experience the benefits of superior protection and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications.

Config: SINGLE

Simplifies installation and handling of the device.

Nominal Breakdown Voltage: 5.2 V

Ensures reliable protection against voltage surges up to 5.2 V.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures efficient and effective suppression of transient events.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Can withstand extremely low temperatures, making it suitable for a wide range of operating conditions.

Reference Standard: IEC-61000-4-2, 4-5

Complies with industry standards for transient suppression devices, ensuring reliable performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering effective protection against voltage spikes.

Maximum Clamping Voltage: 8.2 V

Limits the voltage spike to a safe level, protecting sensitive electronics from damage.

Technical Specifications

Transient Suppression Devices ESDM2032MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

6.7 V

Minimum Breakdown Voltage:

3.7 V

Nominal Breakdown Voltage:

5.2 V

Maximum Clamping Voltage:

8.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.313 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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