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ESDM2021MX4T5G

Onsemi

ESDM2021MX4T5G by Onsemi

ESDM2021MX4T5G by Onsemi is a single transient suppression device with a breakdown voltage of 4.5V and max clamping voltage of 6.4V, suitable for protecting electronic circuits from electrostatic discharge. This chip carrier package features avalanche technology, bidirectional polarity, and meets IEC-61000-4-2 standards, making it ideal for surface mount applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,191 parts In-Stock

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Vyrian

USA . 189 parts In-Stock

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TANS Electronics

Latvia . 4,241 parts In-Stock

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SupplyDigital Components

Austria . 3,900 parts In-Stock

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Corphita

USA . 2,498 parts In-Stock

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Problanco Electronics

Mexico . 1,591 parts In-Stock

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Northwest PG Solutions

USA . 1,463 parts In-Stock

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Native Components

USA . 560 parts In-Stock

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Kulean Microsystems

USA . 323 parts In-Stock

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Corohmni

South Africa . 156 parts In-Stock

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UHIMA Technologies

Türkiye . 121 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the ESDM2021MX4T5G by Onsemi. With a reputation for superior quality and innovative technology, Onsemi delivers top-notch products that exceed industry standards. Ideal for a variety of applications, this chip carrier device offers unmatched protection against voltage spikes and surges. Trust Onsemi to provide peace of mind with their cutting-edge technology and exceptional performance. Experience the difference with the ESDM2021MX4T5G and safeguard your electronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection against external factors and ensures durability of the device.

Nominal Breakdown Voltage: 4.5 V

This voltage level ensures effective suppression of transient voltage spikes, protecting the connected components.

Maximum Reverse Current: 0.1 uA

Low reverse current helps in minimizing power loss and enhancing the efficiency of the device.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions without compromising performance.

Reference Standard: IEC-61000-4-2

Compliance with this standard ensures quality and reliability of the product in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESDM2021MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

5.7 V

Minimum Breakdown Voltage:

3.7 V

Nominal Breakdown Voltage:

4.5 V

Maximum Clamping Voltage:

6.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.313 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

2 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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