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ESDM1131MX4T5G

Onsemi

ESDM1131MX4T5G by Onsemi

ESDM1131MX4T5G by Onsemi is a single bidirectional avalanche diode with 5V breakdown voltage, 0.1uA reverse current, and 7V clamping voltage. It is used for transient suppression in applications requiring protection against ESD events up to 6V.

Median Price

$0.046

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,848 parts In-Stock

1+ parts

$0.270

100+ parts

$0.103

1k+ parts

$0.067

10k+ parts

$0.051

6,848

$0.270

$0.103

$0.067

$0.051

Farnell

UK . 27,900,000 parts In-Stock

1+ parts

-

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$0.046

27,900,000

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-

$0.046

Rochester

USA . 27,809,460 parts In-Stock

1+ parts

-

100+ parts

$0.045

1k+ parts

$0.038

10k+ parts

$0.034

27,809,460

-

$0.045

$0.038

$0.034

Verical

USA . 18,970,000 parts In-Stock

1+ parts

-

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$0.042

18,970,000

-

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-

$0.042

Flip Electronics (Authorized)

USA . 90,000 parts In-Stock

1+ parts

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90,000

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Distributors (In-Stock)

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Digiode

USA . 1,162 parts In-Stock

1+ parts

$0.035

100+ parts

-

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1,162

$0.035

-

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Vyrian

USA . 451 parts In-Stock

1+ parts

$0.037

100+ parts

-

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451

$0.037

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Flip Electronics

USA . 90,000 parts In-Stock

1+ parts

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90,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 185 parts In-Stock

1+ parts

$0.033

100+ parts

-

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185

$0.033

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Corohmni

South Africa . 246 parts In-Stock

1+ parts

$0.037

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246

$0.037

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Native Components

USA . 682 parts In-Stock

1+ parts

$85.577

100+ parts

-

1k+ parts

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10k+ parts

$82.154

682

$85.577

-

-

$82.154

Northwest PG Solutions

USA . 636 parts In-Stock

1+ parts

$94.135

100+ parts

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636

$94.135

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Continental Prestige Electronics

USA . 27,900,000 parts In-Stock

1+ parts

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$0.046

27,900,000

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$0.046

Kulean Microsystems

USA . 4,342 parts In-Stock

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4,342

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SupplyDigital Components

Austria . 2,853 parts In-Stock

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2,853

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Problanco Electronics

Mexico . 2,313 parts In-Stock

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2,313

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TANS Electronics

Latvia . 1,933 parts In-Stock

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1,933

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UHIMA Technologies

Türkiye . 966 parts In-Stock

1+ parts

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966

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Overview

Experience superior protection against transient voltage spikes with the ESDM1131MX4T5G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This Transient Suppression Device is perfect for a wide range of applications, offering customers peace of mind and safeguarding their sensitive electronics from damage. With its advanced technology and high-performance capabilities, the ESDM1131MX4T5G provides unmatched value, benefits, and advantages to meet all your transient suppression needs. Trust Onsemi for exceptional protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device, ensuring a longer lifespan and reliable performance.

Config: SINGLE

Simplifies installation and use, making it ideal for applications where only one suppression point is needed.

Nominal Breakdown Voltage: 5 V

Offers effective protection against voltage spikes up to 5 V, safeguarding sensitive electronics from damage.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current, reducing power consumption and heat generation in the device.

Maximum Operating Temperature: 150 °C

Allows the device to operate reliably in high-temperature environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Ensures the device can function in extremely low temperature conditions, providing protection regardless of the environment.

Maximum Clamping Voltage: 7 V

Limits the voltage spike to a safe level of 7 V, preventing damage to connected equipment.

Technical Specifications

Transient Suppression Devices ESDM1131MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

4 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN COPPER SILVER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDM1131MX4T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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