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XOMAP3530BCBBE

Texas Instruments

XOMAP3530BCBBE by Texas Instruments

XOMAP3530BCBBE by Texas Instruments is a microprocessor with 32-bit external data bus width, 15-bit address bus width, and max clock frequency of 38.4 MHz. It is ideal for applications requiring low power mode, such as mobile devices and embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,605 parts In-Stock

1+ parts

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2,605

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Digiode

USA . 2,399 parts In-Stock

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2,399

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 690 parts In-Stock

1+ parts

$6.000

100+ parts

-

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690

$6.000

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AZTECH Wire

Italy . 271 parts In-Stock

1+ parts

$19.466

100+ parts

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271

$19.466

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Parana Technologies

USA . 1,738 parts In-Stock

1+ parts

$68.899

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1,738

$68.899

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DigiPath Technology Company

USA . 1,512 parts In-Stock

1+ parts

$75.867

100+ parts

$69.797

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1,512

$75.867

$69.797

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IDEA Electronic Components Group

UK . 1,403 parts In-Stock

1+ parts

$77.415

100+ parts

$73.544

1k+ parts

$69.674

10k+ parts

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1,403

$77.415

$73.544

$69.674

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ChromeModa Solutions

Germany . 433 parts In-Stock

1+ parts

$77.415

100+ parts

$63.480

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433

$77.415

$63.480

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Corphita

USA . 4,441 parts In-Stock

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4,441

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Overview

Discover the unrivaled performance and reliability of the XOMAP3530BCBBE microprocessor by Texas Instruments. With a cutting-edge design and advanced technology, this product is perfect for a wide range of applications in various industries. From high-speed data processing to low power consumption, this microprocessor offers unmatched value and benefits to customers looking for top-quality components. Trust in Texas Instruments' reputation for excellence and innovation, and experience the difference with the XOMAP3530BCBBE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the microprocessor easy to handle and resistant to damage.

Integrated Cache: YES

Having integrated cache improves the processing speed and efficiency of the microprocessor.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of electronic devices, reducing production costs.

Address Bus Width: 15

A wider address bus width enables the microprocessor to access and process larger amounts of memory, improving overall performance.

No. of Terminals: 515

Having a high number of terminals allows for more connections and functionality, making the microprocessor versatile and capable of handling complex tasks.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style offers high density and efficient thermal management, making the microprocessor suitable for compact and high-performance applications.

Maximum Clock Frequency: 38.4 MHz

With a high maximum clock frequency, this microprocessor can process instructions quickly, making it ideal for applications that require fast data processing.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC (Reduced Instruction Set Computing) microprocessor means it can execute instructions more efficiently, resulting in better performance and power efficiency.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microprocessor energy-efficient and reliable.

Nominal Supply Voltage: 1.15 V

Operating at a low nominal supply voltage helps in reducing power consumption and heat generation, making the microprocessor energy-efficient and suitable for portable devices.

Technical Specifications

Microprocessors XOMAP3530BCBBE attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

15

Boundary Scan:

YES

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

Length:

12 mm

Low Power Mode:

YES

No. of Terminals:

515

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.9 mm

Speed:

600 rpm

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Peripheral IC Type:

Trade Compliance

XOMAP3530BCBBE Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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