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XOMAP3530ECBB

Texas Instruments

XOMAP3530ECBB by Texas Instruments

XOMAP3530ECBB by Texas Instruments is a Microprocessor with 32-bit External Data Bus, 15-bit Address Bus, and 38.4 MHz Max Clock Frequency. It features Integrated Cache, Boundary Scan support, and operates at a low power mode of 600 rpm. Ideal for applications requiring high-speed processing in compact devices like smartphones and tablets.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,550 parts In-Stock

1+ parts

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4,550

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Vyrian

USA . 3,222 parts In-Stock

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3,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 532 parts In-Stock

1+ parts

$5.000

100+ parts

-

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532

$5.000

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AZTECH Wire

Italy . 292 parts In-Stock

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$13.678

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292

$13.678

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Parana Technologies

USA . 1,492 parts In-Stock

1+ parts

$22.624

100+ parts

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$23.281

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1,492

$22.624

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$23.281

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DigiPath Technology Company

USA . 605 parts In-Stock

1+ parts

$24.912

100+ parts

$22.919

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605

$24.912

$22.919

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ChromeModa Solutions

Germany . 4,225 parts In-Stock

1+ parts

$25.420

100+ parts

$20.844

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4,225

$25.420

$20.844

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IDEA Electronic Components Group

UK . 772 parts In-Stock

1+ parts

$25.420

100+ parts

$24.149

1k+ parts

$22.878

10k+ parts

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772

$25.420

$24.149

$22.878

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Corphita

USA . 1,820 parts In-Stock

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1,820

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Overview

Unlock the power of cutting-edge technology with the Texas Instruments XOMAP3530ECBB microprocessor. Manufactured by a trusted leader in the industry, this innovative product boasts integrated cache and a wide range of applications in various industries. With its advanced features and high performance capabilities, customers can expect seamless operation and enhanced efficiency for their projects. Experience the value and benefits of the XOMAP3530ECBB and elevate your work to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the microprocessor, ensuring a longer lifespan.

Integrated Cache: YES

Having an integrated cache allows for faster access to frequently used data, improving overall processor performance.

Surface Mount: YES

Surface mount technology enables easy installation and replacement of the microprocessor on a circuit board.

Address Bus Width: 15

A wider address bus allows for greater memory addressing capabilities, leading to improved processing efficiency.

Package Shape: SQUARE

A square package shape provides efficient use of space on a circuit board, especially in tight layouts.

No. of Terminals: 515

Having a large number of terminals allows for multiple connections, enhancing the functionality and versatility of the microprocessor.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style offers a compact design with high terminal density, making it ideal for space-constrained applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure connection to the circuit board, ensuring a reliable electrical connection.

Maximum Seated Height: 0.9 mm

A low maximum seated height allows for a slim profile, which is beneficial for compact electronic devices.

Width: 12 mm

A moderate width provides a balance between space efficiency and ease of handling during installation.

Boundary Scan: YES

Boundary scan capability allows for efficient testing and diagnostics of the microprocessor and connected components.

External Data Bus Width: 32

A wide external data bus width enables high-speed data transfer between the microprocessor and external devices.

Maximum Clock Frequency: 38.4 MHz

A high maximum clock frequency enables fast processing speeds, suitable for demanding applications.

Length: 12 mm

A moderate length allows for a balanced form factor, making the microprocessor suitable for various device sizes.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC microprocessor allows for efficient and streamlined processing of instructions, leading to improved performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microprocessor energy-efficient and reliable.

Terminal Form: BALL

Using ball terminals facilitates secure and reliable electrical connections, ensuring stable operation of the microprocessor.

Nominal Supply Voltage: 1.15 V

A low nominal supply voltage contributes to energy efficiency and reduced heat generation, resulting in longer battery life.

Terminal Pitch: 0.5 mm

A small terminal pitch allows for high-density mounting of the microprocessor, maximizing space utilization on the circuit board.

Format: FLOATING POINT

Supporting floating point operations enhances the microprocessor's ability to perform complex mathematical calculations, beneficial for scientific and computational tasks.

Speed: 600 rpm

A high speed rating indicates the microprocessor's capability to process instructions rapidly, meeting the performance requirements of various applications.

Low Power Mode: YES

Having a low power mode option allows for energy-efficient operation, extending battery life and reducing overall power consumption.

Technical Specifications

Microprocessors XOMAP3530ECBB attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

15

Boundary Scan:

YES

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

Length:

12 mm

Low Power Mode:

YES

No. of Terminals:

515

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.9 mm

Speed:

600 rpm

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Peripheral IC Type:

Trade Compliance

XOMAP3530ECBB Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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