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XOMAP3530DCUSD

Texas Instruments

XOMAP3530DCUSD by Texas Instruments

XOMAP3530DCUSD by Texas Instruments is a microprocessor with 32-bit external data bus width, 15-bit address bus width, and max clock frequency of 38.4 MHz. It is used in applications requiring low power mode, such as mobile devices and embedded systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,028 parts In-Stock

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Digiode

USA . 3,689 parts In-Stock

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3,689

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Distributors (Availability)

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AZTECH Wire

Italy . 243 parts In-Stock

1+ parts

$6.298

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243

$6.298

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One Stop Electronics

USA . 1,168 parts In-Stock

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$11.000

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Parana Technologies

USA . 1,487 parts In-Stock

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$48.833

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$4,534.840

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$43.949

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1,487

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$4,534.840

$43.949

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DigiPath Technology Company

USA . 1,886 parts In-Stock

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$53.771

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$53.771

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ChromeModa Solutions

Germany . 4,031 parts In-Stock

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$54.868

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$44.992

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4,031

$54.868

$44.992

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IDEA Electronic Components Group

UK . 1,403 parts In-Stock

1+ parts

$54.868

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$52.125

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$49.381

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1,403

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Corphita

USA . 3,380 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the XOMAP3530DCUSD by Texas Instruments, a top-tier manufacturer known for cutting-edge microprocessors. This powerful processor is perfect for a wide range of applications, offering seamless integration, high-speed processing, and efficient data handling. With its innovative technology and exceptional design, this product delivers exceptional value and benefits to customers looking for top-quality solutions in the world of microprocessors. Upgrade your systems with the XOMAP3530DCUSD and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the microprocessor, ensuring a longer lifespan.

Integrated Cache: YES

Having an integrated cache improves the overall performance and speed of the microprocessor by reducing memory access times.

Surface Mount: YES

Being surface mountable makes the installation process easier and ensures a secure connection, ideal for compact electronic devices.

Address Bus Width: 15

With a wider address bus width, the microprocessor can handle more memory addresses, improving its capability to process data.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a circuit board, making it a convenient choice for compact designs.

No. of Terminals: 423

Having a high number of terminals enables the microprocessor to connect to various components, expanding its compatibility and functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array, low profile, and fine pitch package style allows for more terminals in a smaller footprint, increasing the microprocessor's versatility in different applications.

Terminal Position: BOTTOM

The terminal position at the bottom makes it easier to integrate the microprocessor into a circuit board, saving space and providing a clean layout.

Maximum Seated Height: 1.4 mm

With a low maximum seated height, this microprocessor is suitable for slim devices where space is limited.

Width: 16 mm

The compact width of the microprocessor makes it suitable for small electronic devices where space optimization is crucial.

Boundary Scan: YES

Having boundary scan capability allows for easier debugging and testing of the microprocessor during the design and production process.

External Data Bus Width: 32

With a wide external data bus, the microprocessor can handle larger chunks of data at a time, improving data transfer speeds and overall performance.

Maximum Clock Frequency: 38.4 MHz

The high maximum clock frequency allows the microprocessor to process instructions at a faster rate, enhancing overall performance.

Length: 16 mm

The compact length of the microprocessor makes it suitable for small form factor devices without compromising on performance.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC microprocessor, it offers simplified instruction set architecture and faster execution, making it ideal for high-performance computing.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this microprocessor energy-efficient and suitable for battery-powered devices.

Terminal Form: BALL

The ball terminal form provides a reliable and secure connection, ensuring stable performance in various operating conditions.

Nominal Supply Voltage: 1.15 V

The low nominal supply voltage makes this microprocessor energy-efficient, extending battery life in portable devices.

Terminal Pitch: 0.65 mm

The fine terminal pitch allows for more terminals in a smaller area, increasing the microprocessor's connectivity and functionality.

Format: FLOATING POINT

Featuring a floating point format enables the microprocessor to handle complex mathematical operations with improved accuracy and precision.

Speed: 600 rpm

With a high speed of 600 rpm, this microprocessor can quickly process instructions and data, leading to efficient performance in demanding applications.

Low Power Mode: YES

Having a low power mode allows the microprocessor to conserve energy during idle periods or low-demand tasks, maximizing overall efficiency.

Technical Specifications

Microprocessors XOMAP3530DCUSD attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

15

Boundary Scan:

YES

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B423

Length:

16 mm

Low Power Mode:

YES

No. of Terminals:

423

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.4 mm

Speed:

600 rpm

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

16 mm

Peripheral IC Type:

Trade Compliance

XOMAP3530DCUSD Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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