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SN74V263-10GGM

Texas Instruments

SN74V263-10GGM by Texas Instruments

SN74V263-10GGM by Texas Instruments is a FIFO memory with 8Kx18 organization, 100 terminals, and operates at 100 MHz. It has a cycle time of 10 ns and can be used in applications requiring fast synchronous data storage and retrieval. The device features a low profile grid array package with 0.8 mm terminal pitch suitable for commercial temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,223 parts In-Stock

1+ parts

-

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5,223

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Digiode

USA . 1,871 parts In-Stock

1+ parts

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1,871

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,986 parts In-Stock

1+ parts

$5.297

100+ parts

-

1k+ parts

$5.925

10k+ parts

-

1,986

$5.297

-

$5.925

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DigiPath Technology Company

USA . 1,654 parts In-Stock

1+ parts

$5.833

100+ parts

-

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10k+ parts

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1,654

$5.833

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IDEA Electronic Components Group

UK . 2,336 parts In-Stock

1+ parts

$5.952

100+ parts

-

1k+ parts

$5.357

10k+ parts

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2,336

$5.952

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$5.357

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ChromeModa Solutions

Germany . 1,104 parts In-Stock

1+ parts

$5.952

100+ parts

$4.881

1k+ parts

-

10k+ parts

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1,104

$5.952

$4.881

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AZTECH Wire

Italy . 396 parts In-Stock

1+ parts

$8.241

100+ parts

-

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396

$8.241

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One Stop Electronics

USA . 1,508 parts In-Stock

1+ parts

$11.000

100+ parts

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1,508

$11.000

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Ampacity Inc.

Singapore . 1,167 parts In-Stock

1+ parts

$27.000

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1,167

$27.000

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Corphita

USA . 1,258 parts In-Stock

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1,258

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Microchip USA

USA . 174 parts In-Stock

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174

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Overview

Enhance your electronic devices with the top-of-the-line SN74V263-10GGM FIFO by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology that exceeds industry standards. This versatile FIFO is perfect for a wide range of applications, providing seamless data storage and retrieval at lightning-fast speeds. With a compact design and low power consumption, this product offers unbeatable value and performance. Upgrade your projects today with the SN74V263-10GGM and experience the difference that Texas Instruments can make in your electronic creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Operates in synchronous mode, ensuring data is processed efficiently and accurately.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard supply voltage of 3.3V, making it compatible with a wide range of systems.

Maximum Clock Frequency (fCLK): 100 MHz

High clock frequency allows for fast data transfer and processing, improving overall system performance.

Memory IC Type: OTHER FIFO

Specifically designed as a FIFO (First In, First Out) memory IC, ensuring efficient data storage and retrieval.

Technical Specifications

FIFO SN74V263-10GGM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

6.5 ns

Additional Features:

CAN ALSO BE CONFIGURED AS 16384 X 9

Alternate Memory Width:

9

Maximum Clock Frequency (fCLK):

100 MHz

Cycle Time:

10 ns

JESD-30 Code:

S-PBGA-B100

Length:

10 mm

Memory Density:

147456 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74V263-10GGM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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