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SN74LS603AJ

Texas Instruments

SN74LS603AJ by Texas Instruments

SN74LS603AJ by Texas Instruments is a Memory Controller with 8-bit Address Bus Width, 64K X 1 Memory Organization, and operates at a Max Supply Voltage of 5.25 V. It is commonly used in commercial applications requiring DRAM memory control with TTL technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,329 parts In-Stock

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8,329

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Digiode

USA . 548 parts In-Stock

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548

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 1,168 parts In-Stock

1+ parts

$16.783

100+ parts

-

1k+ parts

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1,168

$16.783

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AZTECH Wire

Italy . 662 parts In-Stock

1+ parts

$18.038

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662

$18.038

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One Stop Electronics

USA . 252 parts In-Stock

1+ parts

$26.000

100+ parts

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252

$26.000

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Parana Technologies

USA . 853 parts In-Stock

1+ parts

$55.597

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853

$55.597

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DigiPath Technology Company

USA . 1,245 parts In-Stock

1+ parts

$61.219

100+ parts

$56.321

1k+ parts

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1,245

$61.219

$56.321

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ChromeModa Solutions

Germany . 5,417 parts In-Stock

1+ parts

$62.468

100+ parts

$51.224

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5,417

$62.468

$51.224

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IDEA Electronic Components Group

UK . 245 parts In-Stock

1+ parts

$62.468

100+ parts

$59.345

1k+ parts

$56.221

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245

$62.468

$59.345

$56.221

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Corphita

USA . 1,362 parts In-Stock

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1,362

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Overview

Unlock the power of efficient memory control with the SN74LS603AJ by Texas Instruments. Crafted from high-quality ceramic and glass-sealed materials, this DRAM memory controller offers seamless performance in a compact rectangular package. Ideal for a wide range of applications, this product provides reliable memory organization and a wide address bus width of 8, ensuring optimal functionality. Experience the superior quality and unmatched value that Texas Instruments delivers, all in a cost-effective solution that brings convenience and reliability to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the memory controller, ensuring reliability in various environments.

Maximum Supply Voltage: 5.25 V

Allows for a higher voltage tolerance, increasing the overall stability and performance of the memory controller.

Address Bus Width: 8

Supports a wider bus width, enabling faster data transfer and communication with memory devices.

Package Shape: RECTANGULAR

Standard rectangular shape makes it easy to integrate into existing circuit designs and layouts.

Power Supplies (V): 5

Operates on a common and widely available power supply voltage, ensuring compatibility with various systems.

No. of Terminals: 20

Sufficient number of terminals for connecting to other components in a system, allowing for versatile integration.

Package Style (Meter): IN-LINE

Compact in-line package style saves space and allows for efficient PCB layout.

Minimum Supply Voltage: 4.75 V

Supports a lower supply voltage for power efficiency while still maintaining stable operation.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications.

Minimum Operating Temperature: 0 °C

Capable of operating in low-temperature environments, ensuring functionality in various conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connectivity options.

Maximum Seated Height: 5.08 mm

Low profile design allows for compact system integration and reduces overall height of the memory controller.

Width: 7.62 mm

Compact width dimension for space-saving installation in tight PCB layouts.

Length: 24.195 mm

Provides a standard length for easy integration and placement within a circuit design.

Temperature Grade: COMMERCIAL

Suitable for commercial applications with typical temperature requirements, such as consumer electronics.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

Designed specifically for memory control and DRAM operations, ensuring optimized performance in memory management.

Technology: TTL

Utilizes TTL technology for reliable and fast digital signal processing, enhancing overall communication speed.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and stable connections to the PCB, preventing movement and ensuring signal integrity.

Maximum Supply Current: 85 mA

Low supply current requirement for power efficiency and reduced heat generation during operation.

Nominal Supply Voltage: 5 V

Operates at a standard nominal voltage for compatibility with a wide range of systems and power sources.

Memory Organization: 64K X 1

Efficient memory organization scheme for handling and storing data, providing optimal memory management capabilities.

Terminal Pitch: 2.54 mm

Standard terminal pitch for easy soldering and connection to the PCB, simplifying assembly and maintenance processes.

Technical Specifications

Memory Controllers SN74LS603AJ attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

8

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-GDIP-T20

Length:

24.195 mm

Low Power Mode:

NO

Memory Organization:

64K X 1

No. of Banks:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Memory Controllers

Maximum Supply Current:

85 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Peripheral IC Type:

Trade Compliance

SN74LS603AJ Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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